B81C1/00825

Semiconductor device and method of manufacturing the same
10252905 · 2019-04-09 · ·

A semiconductor device includes a substrate, a beam, a movable structural body, a first stopper member, a second stopper member and a third stopper member. The first stopper member is arranged with a first gap from the movable structural body in an in-plane direction. The second stopper member is arranged with a second gap from the movable structural body in an out-of-plane direction. The third stopper member is arranged opposite to the second stopper member with the movable structural body interposed therebetween in the out-of-plane direction, and is arranged with a third gap from the movable structural body. Consequently, there can be provided a semiconductor device in which excessive displacement of the movable structural body can be suppressed to thereby suppress damage to and breakage of the beam supporting the movable structural body, and a method of manufacturing the same.

Thermal airflow sensor

A thermal airflow sensor includes a semiconductor device, a protective film a bonding wire, and a resin. The resin covers over a part of the semiconductor device so that the bonding wire is covered with the resin and the region including a thin-wall portion is exposed. The protective film is not covered with the resin and has an outer peripheral edge located outside the thin-wall portion.

Microelectromechanical device with protection for bonding
10239748 · 2019-03-26 · ·

A microelectromechanical device includes: a substrate; a semiconductor die, bonded to the substrate and incorporating a microstructure; an adhesive film layer between the die and the substrate; and a protective layer between the die and the adhesive film layer. The protective layer has apertures, and the adhesive film layer adheres to the die through the apertures of the protective layer.

Semiconductor structures provided within a cavity and related design structures

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Method of strain gauge fabrication using a transfer substrate

A method of strain gauge fabrication is presented herein. The method includes: providing a first substrate having a cavity side; providing a second substrate having a semiconductor side; positioning the second substrate in relation to the first substrate such that the semiconductor side and the cavity side are contactable; processing the second substrate such that the first and second substrates are substantially joined via the semiconductor side and the cavity side; and etching the second substrate to define a strain gauge cantilevered over the cavity side of the first substrate.

METHOD FOR MANUFACTURING GAS DETECTOR BY MEMS PROCESS

A method for manufacturing a gas detector by a micro-electrical-mechanical systems (MEMS) process. The method includes providing a MEMS wafer including a plurality of mutually adjacent units; forming a gas sensing material layer on the MEMS wafer; bonding a structure reinforcing layer and the MEMS wafer through anode bonding; providing an adhesive tape; performing a cutting process to form a gas detection unit; and adhering the gas detection unit on a substrate by the adhesive tape to form a gas detector. The structure reinforcing layer is capable of enhancing the strength of a device and preventing edge collapsing, and hence enhancing the overall yield rate and reducing costs.

METHOD FOR PACKAGING AT LEAST ONE SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR DEVICE
20180346327 · 2018-12-06 ·

At least one semiconductor component is packaged by covering at least one partial surface of the at least one semiconductor component with at least one chemically or physically dissoluble sacrificial material; surrounding the at least one semiconductor component at least partially with a photoablatable packaging material; exposing the sacrificial material on the at least one partial surface of the at least one semiconductor component at least partially by forming at least one trench through at least the packaging material using a light beam; and exposing the at least one partial surface of the at least one semiconductor component at least partially by at least partially removing the previously exposed sacrificial material using a chemical or physical removal method to which the packaging material has a higher resistance than the sacrificial material.

MEMS devices having tethering structures

The present disclosure relates to a method for fabricating a micro-electromechanical system (MEMS) device. In the method, a carrier wafer is received. A MEMS wafer, which includes a plurality of die, is bonded to the carrier wafer. A cavity is formed to separate an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer. A separation trench is formed to laterally surround the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer. The die and carrier wafer are translated with respect to one another to break the tethering structure and separate the die from the carrier wafer.

SEMICONDUCTOR STRUCTURES PROVIDED WITHIN A CAVITY AND RELATED DESIGN STRUCTURES

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Semiconductor structures provided within a cavity and related design structures

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.