B81C1/0088

Process for the transfer of at least a portion of a composite film onto a flexible polymer membrane

Process for the transfer of a composite film onto a flexible polymer membrane in which the composite film comprises a matrix made of thermoplastic polymer and particles. This process comprises the following operations: 1) the movement of the membrane into a position in which it closes up, in a way leaktight to a fluid, an opening of a reservoir and a first zone of its front face is directly in contact on an external face of the composite film, 2) the heating of the composite film, so as to soften it, then 3) when the composite film is softened, a fluid inside the reservoir uniformly compresses the first zone against the external face of the composite film in order to adhesively bond this first zone to this external face, then 4) the movement of the membrane to a retracted position in order to separate, from the rigid substrate, the portion of the composite film adhesively bonded to the first zone.

Crystalline magnetic layer to amorphous substrate bonding

Various methods for attaching a crystalline write pole onto an amorphous substrate and the resulting structures are described in detail herein. Further, the resulting structure may have a magnetic moment exceeding 2.4 Tesla. Still further, methods for depositing an epitaxial crystalline write pole on a crystalline seed or template material to ensure that the phase of the write pole is consistent with the high moment phase of the template material are also described in detail herein.

Semiconductor devices and related methods

In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

SEMICONDUCTOR DEVICES AND RELATED METHODS
20250326632 · 2025-10-23 ·

In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

SAMPLE WELL FABRICATION TECHNIQUES AND STRUCTURES FOR INTEGRATED SENSOR DEVICES
20260020323 · 2026-01-15 · ·

Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.