For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

A transfer head is provided. The transfer head includes a body having a plurality of arrays of grip regions with each of the arrays comprising at least two columns of the grip regions. The grip regions in one of the columns are electrically connected in series. The columns in one of the arrays are controlled by a single voltage source, and the columns in two of the arrays are controlled by two voltage sources respectively.

A method for fabricating a microelectromechanical system device. Submerging a microelectromechanical system device in water. The microelectromechanical system devices include a sacrificial layer deposited on the surface of a substrate between the portion of a structural layer to be freed for movement and a base. Anodically etching the sacrificial layer from the microelectromechanical device to free the portion of the structural layer for movement. A system comprising a solution of water, a microelectromechanical system device including a sacrificial layer of chromium deposited on the surface of a substrate between a portion of a structural layer and a base. The microelectromechanical system device is submerged in the solution of water. An electrode is submerged in the water. The electrode provides a negative bias. A voltage source provides a positive bias to the sacrificial layer of chromium, anodically etching the sacrificial layer of chromium and freeing the portion of the structural layer.

A method for fabricating a microelectromechanical system device. Submerging a microelectromechanical system device in water. The microelectromechanical system devices include a sacrificial layer deposited on the surface of a substrate between the portion of a structural layer to be freed for movement and a base. Anodically etching the sacrificial layer from the microelectromechanical device to free the portion of the structural layer for movement. A system comprising a solution of water, a microelectromechanical system device including a sacrificial layer of chromium deposited on the surface of a substrate between a portion of a structural layer and a base. The microelectromechanical system device is submerged in the solution of water. An electrode is submerged in the water. The electrode provides a negative bias. A voltage source provides a positive bias to the sacrificial layer of chromium, anodically etching the sacrificial layer of chromium and freeing the portion of the structural layer.

In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage angle 1 setting a stage inclination angle and a stage angle 2 of the inclination angle different from the stage angle 1. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage angles 1 and 2. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angle 1 and a fourth image that is a device image acquired when the stage is set at the stage angle 2. When the three-dimensional device data is created, a correction value calculated from the stage angles 1 and 2 and the first and second images is used.

Methods of fabricating a damascene template for electrophoretic assembly and transfer of patterned nanoelements are provided which do not require chemical mechanical polishing to achieve a uniform surface area. The methods include conductive layer fabrication using a combination of precision lithography techniques using etching or building up the conductive layer to form raised conductive features separated by an insulating layer of equal height.

Provided is an integrated dicing die bonding sheet having excellent storage stability and stress relaxation properties, having no problems such as chip flying, chipping, cracking, and the like during a dicing process, and having excellent production efficiency; and a method of manufacturing a semiconductor device (particularly including a MEMS device) using the same. An integrated dicing die bonding sheet including a base film, and a silicone-based adhesive sheet having an adhesive surface adhered to the semiconductor wafer, wherein at a stage after dicing the semiconductor wafer and prior to heating, the base film can be interfacially peeled from the silicone-based adhesive sheet, and after the adhesive surface is heated within a range of 50 to 200 C., a peeling mode of the adhesive surface from another non-pressure-sensitive adhesive base material changes to cohesive failure, exhibiting permanent adhesion.

This work develops a novel microfluidic method to fabricate conductive graphene-based 3D micro-electronic circuits on any solid substrate including, Teflon, Delrin, silicon wafer, glass, metal or biodegradable/non-biodegradable polymer-based, 3D microstructured, flexible films. It was demonstrated that this novel method can be universally applied to many different natural or synthetic polymer-based films or any other solid substrates with proper pattern to create graphene-based conductive electronic circuits. This approach also enables fabrication of 3D circuits of flexible electronic films or solid substrates. It is a green process preventing the need for expensive and harsh postprocessing requirements for other fabrication methods such as ink-jet printing or photolithography. We reported that it is possible to fill the pattern channels with different dimensions as low as 10?10 ?m. The graphene nanoplatelet solution with a concentration of 60 mg/mL in 70% ethanol, pre-annealed at 75? C. for 3 h, provided ?0.5-2 kOhm resistance. The filling of the pattern channels with this solution at a flow rate of 100 ?L/min created a continuous conductive graphene pattern on flexible polymeric films. The amount of graphene used to coat 1 cm.sup.2 of area is estimated as ?10 ?g. A second method regarding the transfer of graphene material-based circuits with small features size (5 ?m depth, 10 ?m width) from any solid surface to flexible polymeric films via polymer solvent casting approach was demonstrated. This method is applicable to any natural/synthetic polymer and their respective organic/inorganic solvents.

The invention relates to the field of method of etching a substrate (W), in particular a wafer, in order to produce a grid of micro-protrusion. Such grid of micro-protrusion is generally made using UV photolithography followed by wet and chemical engraving with an etching solution. Most of the currently available methods do not lead to an even attack of the wafer surface by the etching solution because the reaction produces a release of micro-bubbles which, if not properly evacuated, disturb the etching process. In the present invention, substrate(s) (W) are disposed on a magnetic supporting device (1) which is driven in rotation in the etching solution via a magnetic agitator external to the etching solution, so that the magnetic supporting device (1) causes the substrate to rotate at least in a same direction the magnetic supporting device (1). The present invention makes it possible to obtain substrates with good homogeneity.

The present disclosure discloses a self-packing three-arm thermal scanning probe for micro-nano manufacturing, comprising: a three-arm cantilever beam, metal contact pads, a nichrome heating electrode for printing, a nichrome heating electrode for transportation, and a polymer storage area. The present disclosure is manufactured by conventional micro-nano machining processes such as lithography and wet etching. In the present disclosure, a gradient density design of heating electrodes is used to generated continuous change of temperature gradients, thus realizing continuous transportation of a printing material from a storage area to a tip area, which realizes self-packing. The present disclosure can be seamlessly integrated with a CMOS process, and a printed material can be completely eliminated by means of commonly used acetone or oxygen plasma in the CMOS process, without contamination; furthermore, the micro-nano machining method of the present disclosure only requires an atomic force microscope whose cost is very low.