A method for processing a silicon substrate is provided the method including repeatedly and alternately performing: an etching step of forming an etching pattern on the silicon substrate; and a protective film formation step of forming a protective film on a wall surface of the silicon substrate exposed in the etching step, wherein the method includes a protective film removal step of removing the protective film, which has been formed in the protective film formation step, by using a peeling solution, and wherein in the protective film formation step, the protective film is formed by using a mixed gas including 2,3,3,3-tetrafluoropropene and perfluorocyclobutane.

In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

The present invention disclosed a CMOS sensing component, a CMOS single chip and a method of manufacturing the same. The CMOS single chip comprises a movable film, at least one support pillar, a base metal layer and a circuit integration. The movable film is disposed on a top layer of the CMOS single chip and has a plurality of through-vias. The support pillar is disposed under the movable film to provide a supporting force of the movable film. The base metal layer is formed under the support pillars and isolated from the support pillars, and faces towards the movable film to form a micro capacitor to sense one of the outside sensing signals, the area of the base metal layer larger than the area of the movable film. The circuit integration is formed under the base metal layer, or formed under the base metal layer and on the side of the movable film, and connected to the movable film and the base metal layer, to provide operation voltages to the movable film and the base metal layer, and to receive the outside sensing signal generated sensed by the movable film and the base metal layer and convert the outside sensing signal into an output signal.

A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.

A manufacturing method of an electronic device includes a process that forms a protective layer on at least a portion of the first base body to which a third base body is to be bonded, a process that performs first bonding of a second base body to the first base body, a process that performs a first etching of the second base body bonded by the first bonding, a process that removes the protective layer using a second etching, and a process that performs second bonding of the third base body to the first base body. In the first etching, an etching rate of the second base body is faster than those of the first base body and the protective layer, and in the second etching, an etching rate of the protective layer is faster than those of the first base body and the second base body.

In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

A method for forming a micro-electro mechanical system (MEMS) device is provided. The method includes forming a first dielectric layer over a semiconductor layer and forming a blocking layer over the first dielectric layer. The method also includes bonding a CMOS substrate with the blocking layer, and the CMOS substrate includes a second dielectric layer, and the blocking layer is configured to block gas coming from the second dielectric layer. The method further includes partially removing the first dielectric layer to form a cavity between the semiconductor layer and the blocking layer. A portion of the semiconductor layer above the cavity becomes a movable element. In addition, the method includes sealing the cavity such that a closed chamber is formed to surround the movable element.

An electromechanical device may include a first substrate, a second substrate, a connector, and a protector. The connector may be formed of a first dielectric material and may be positioned between the first substrate and the second substrate. A first side of the connector may directly contact the first substrate. The protector may be formed of a second dielectric material and may directly contact a second side of the connector.

An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.