A protective member forming apparatus includes an ultraviolet radiation applying table that supports a workpiece on a support surface of a support plate thereof through which ultraviolet rays are transmittable, a delivery unit that holds a resin sheet to which the workpiece is fixed, to unload the workpiece from the ultraviolet radiation applying table, a resin supply unit that supplies an ultraviolet-curable liquid resin to the resin sheet placed on the support surface, a pressing unit that presses the workpiece from a reverse side thereof toward the liquid resin supplied to the resin sheet placed on the support surface, and an ionizer unit that ejects ionized air to the support surface of the ultraviolet radiation applying table.

A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

A microelectromechanical (MEMS) microphone with membrane trench reinforcements and method of fabrication is provided. The MEMS microphone includes a flexible plate and a rigid plate mechanically coupled to the flexible plate. The MEMS microphone includes a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate. The stoppage member limits motion of the flexible plate. The rigid plate includes a reverse bending edge that include a first lateral etch stop that includes a first corner radius and a second lateral etch stop that includes a second corner radius. The first corner radius is more than 100 nanometers and the second corner radius is more than 25 nanometers. Further, a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

A microelectromechanical (MEMS) microphone with membrane trench reinforcements and method of fabrication is provided. The MEMS microphone includes a flexible plate and a rigid plate mechanically coupled to the flexible plate. The MEMS microphone includes a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate. The stoppage member limits motion of the flexible plate. The rigid plate includes a reverse bending edge that include a first lateral etch stop that includes a first corner radius and a second lateral etch stop that includes a second corner radius. The first corner radius is more than 100 nanometers and the second corner radius is more than 25 nanometers. Further, a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

A protective member forming apparatus includes an ultraviolet radiation applying table that supports a workpiece on a support surface of a support plate thereof through which ultraviolet rays are transmittable, a delivery unit that holds a resin sheet to which the workpiece is fixed, to unload the workpiece from the ultraviolet radiation applying table, a resin supply unit that supplies an ultraviolet-curable liquid resin to the resin sheet placed on the support surface, a pressing unit that presses the workpiece from a reverse side thereof toward the liquid resin supplied to the resin sheet placed on the support surface, and an ionizer unit that ejects ionized air to the support surface of the ultraviolet radiation applying table.

In an embodiment, a method for fabricating a Microelectromechanical System (MEMS) microphone includes depositing, on a frontside of a wafer, a first oxide layer over a silicon nitride thin film and over and adjacent the wafer, wherein the silicon nitride thin film is disposed over the wafer, depositing a membrane protection layer over the first oxide layer between a first side of a first cavity formed in the wafer and a second side of a second cavity formed in the wafer, depositing a second oxide layer over and adjacent the membrane protection layer, depositing a first membrane nitride layer over the second oxide layer, depositing a membrane polysilicon layer over the first membrane nitride layer, depositing a second membrane nitride layer over the membrane polysilicon layer, depositing a third oxide layer over the second membrane nitride layer and depositing a fourth oxide layer over the third oxide layer.

Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.

The invention provides a method for manufacturing a MEMS microphone, including the steps of: providing a base and preparing a first diaphragm on a first surface of the base; preparing a back plate on a surface of the first diaphragm opposite to the first surface; forming a first gap between the first diaphragm and the back plate; preparing a second diaphragm; forming a second gap between the second diaphragm and the back plate; preparing electrodes; forming a back cavity by etching the surface opposite to the first surface.

A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

A method for producing MEMS components comprises generating a carrier having a plurality of recesses. An adhesive structure is arranged on the carrier and in the recesses. A semiconductor wafer is generated, which has a plurality of MEMS structures arranged at the first main surface of the semiconductor wafer. The adhesive structure is attached to the first main surface of the semiconductor wafer, with the recesses being arranged above the MEMS structures and the adhesive structure not contacting the MEMS structures. The semiconductor wafer is singulated into a plurality of MEMS components by applying a mechanical dicing process.