Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.

A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

A sensor device, such as a biosensor, may comprise a polymer substrate, which is structured so as to form sets of microneedles and respective vias. The microneedles extend, each, from a base surface of the substrate. Each of the vias extends through a thickness of the substrate, thereby forming a corresponding set of apertures on the base surface. Each of the apertures is adjacent to a respective one of the microneedles. The device further may comprise two or more electrodes, these including a sensing electrode and a reference electrode. Each electrode may comprise an electrically conductive material layer that coats a region of the substrate, so as to coat at least some of the microneedles and neighboring portions of said base surface. Related devices, apparatuses, and methods of fabrication and use of such devices may be provided.

Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

A micromechanical diaphragm system including a first diaphragm and a second diaphragm and spacer elements which are arranged between the first diaphragm and the second diaphragm. At least one spacer element has a first supporting element and a second supporting element. The first supporting element faces the first diaphragm. The second supporting element faces the second diaphragm. The first supporting element and the second supporting element are connected via a spring element.

Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.

A method for fabrication of free standing mechanical and photonic structures is presented. A resist mask is applied to a bulk substrate. The bulk substrate is attached to a movable platform. The bulk substrate is exposed to an ion stream produced by a reactive ion beam etching source. The platform is moved relative to the ion stream to facilitate undercutting a portion of the bulk substrate otherwise shielded by the mask.

The present disclosure involves forming a method of fabricating a Micro-Electro-Mechanical System (MEMS) device. A plurality of openings is formed in a first side of a first substrate. A dielectric layer is formed over the first side of the substrate. A plurality of segments of the dielectric layer fills the openings. The first side of the first substrate is bonded to a second substrate that contains a cavity. The bonding is performed such that the segments of the dielectric layer are disposed over the cavity. A portion of the first substrate disposed over the cavity is transformed into a plurality of movable components of a MEMS device. The movable components are in physical contact with the dielectric the layer. Thereafter, a portion of the dielectric layer is removed without using liquid chemicals.