Patent classifications
B81C2201/112
METHOD AND SYSTEM FOR FABRICATING A MEMS DEVICE CAP
A device includes a substrate comprising a first standoff, a second standoff, a third standoff, a first cavity, a second cavity, and a bonding material covering a portion of the first, the second, and the third standoff. The first cavity is positioned between the first and the second standoffs, and the second cavity is positioned between the second and the third standoffs. The first cavity comprises a first cavity region and a second cavity region separated by a portion of the substrate extruding thereto, and wherein a depth associated with the first cavity region is greater than a depth associated with the second cavity. A surface of the first cavity is covered with a getter material.
SEMICONDUCTOR MEMS STRUCTURE AND METHOD OF FORMING THE SAME
A method includes: receiving a first substrate; forming a bonding layer on a second substrate; bonding the second substrate to the first substrate; forming a movable membrane on the second substrate, the forming including performing an etching operation to form a through via through a thickness of the second substrate; and forming a first anti-stiction structure on a surface of the movable membrane. The forming of the first anti-stiction structure is performed at a same time as at least one of the etching operation of the through via and the forming of the bonding layer.
ROUGHNESS SELECTIVITY FOR MEMS MOVEMENT STICTION REDUCTION
A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.
MEMS ELECTROSTATIC ACTUATOR BLADE CONFIGURATIONS AND METHODS OF MANUFACTURE
Methods, apparatuses and methods of manufacture are described for a MEMS electrostatic blade actuator with different configurations to allow for improvements to performance. The MEMS electrostatic blade actuator with different configurations can be used in a MEMS mirror to reduce mass or reduce operating voltage.
Anti-Stiction Process for Mems Device
A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.