A microelectromechanical systems (MEMS) package with roughness for high quality anti-stiction is provided. A device substrate is arranged over a support device. The device substrate comprises a movable element with a lower surface that is rough and that is arranged within a cavity. A dielectric layer is arranged between the support device and the device substrate. The dielectric layer laterally encloses the cavity. An anti-stiction layer lines the lower surface of the movable element. A method for manufacturing the MEMS package is also provided.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface.

A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

A MEMS device includes a first structure including at least one first bump over a surface of the first structure, a second structure including a first side facing the surface of the first bump and a second side opposite to the first side, and a gap between the first structure and the second structure. The first structure and the second structure are configured to move in relation to each other. The first bump includes a plurality of first teeth over a stop surface of the first bump.

A MEMS device includes a first structure including at least one first bump over a surface of the first structure, a second structure including a first side facing the surface of the first bump and a second side opposite to the first side, and a gap between the first structure and the second structure. The first structure and the second structure are configured to move in relation to each other. The first bump includes a plurality of first teeth over a stop surface of the first bump.

Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.

A surface of a cavity of a MEMS device that is rough to reduce stiction. In some embodiments, the average roughness (Ra) of the surface is 5 nm or greater. In some embodiments, the rough surface is formed by forming one or more layers of a rough oxidizable material, then oxidizing the material to form an oxide layer with a rough surface. Another layer is formed over the oxide layer with the rough surface, wherein the roughness of the oxide layer is transferred to the another layer.

The application describes a MEMS transducer comprising a substrate having a cavity. The transducer exhibits a membrane layer supported relative to the substrate to define a flexible membrane. An upper surface of the substrate comprises an overlap region between the edge of the cavity and a perimeter of the flexible membrane where the membrane overlies the upper surface of the substrate. At least one portion of the overlap region of the upper surface of the substrate is provided with a plurality of recesses. The recesses are defined so as to extend from the edge of the cavity towards the perimeter of the flexible membrane.

A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having an inertial transducer element formed in a multi-layer semiconductor structure, where the first inertial transducer element comprises a first monocrystalline semiconductor proof mass element and a second conductive electrode element separated from one another by an air sensing gap, and where at least a first sensing gap surface of the first monocrystalline semiconductor proof mass element is a first rough surface that has been selectively etched to reduce stiction between the first monocrystalline semiconductor proof mass element and the second conductive electrode element.