The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

A hermetically sealed package for thermal encapsulation of a functional area includes: a base substrate; a cover substrate, the base substrate together with the cover substrate forming at least part of the package or forming the package, at least one of the base substrate or the cover substrate being in the form of a thermal insulator; at least one functional area hermetically sealed by the package, heat can be generated inside the at least one functional area of the package; and at least one laser bonding line hermetically joining the base substrate and the cover substrate to one another. The at least one laser bonding line has a height perpendicular to its bonding plane.

A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.

A sound producing package structure configured to produce sound includes a substrate, a sound producing component and a conductive adhesive layer. The sound producing component is disposed on the substrate, and the sound producing component is configured to generate an acoustic wave corresponding to an input audio signal. The conductive adhesive layer is disposed between the substrate and the sound producing component by a surface mount technology.

In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

A MEMS transducing apparatus includes a substrate, a conductive pad, a stacked structure of a transducing device, a first polymer layer, a second polymer layer and a third polymer layer. An upper cavity is formed through the substrate. The conductive pad is formed on a first surface of the substrate to cover a first opening of the upper cavity. The stacked structure of the transducing device is formed on the conductive pad. The first polymer layer is formed on the first surface of the substrate. A lower cavity is formed through the first polymer layer. The stacked structure of the transducing device is exposed within the lower cavity. The third polymer layer is formed on a second surface of the substrate to cover a second opening of the upper cavity. The second polymer layer is formed on the first polymer layer to cover a third opening of the lower cavity.

A thin-film filter includes thin-film part having a film surface and a rear film surface arranged at the rear side of the film surface, a plurality of through holes, being formed to penetrate the thin-film part from the film surface to the rear film surface, the through holes are formed along by a slanting direction being made an acute angle or an obtuse angle with the film surface, and stripes-formed inner wall surfaces. The stripes-formed inner wall surfaces include stripe-like parts formed along by the slanting direction. The stripes-formed inner wall surfaces are formed inside the respective through holes.

A method of forming a capacitive micromachined ultrasonic transducer (CMUT) device includes bonding a CMUT substrate to a silicon on insulator (SOI) substrate. The CMUT substrate has a first thickness and the SOI substrate includes a handle, a buried oxide layer, and a device layer. At least one of the CMUT substrate or the SOI substrate includes a patterned dielectric layer. The device layer is bonded to the patterned dielectric layer to form a plurality of sealed cavities and the device layer forms a diaphragm of the plurality of cavities. The method further includes reducing the first thickness of the CMUT substrate to a second thickness and forming a plurality of through-silicon vias from a second surface of the CMUT substrate opposite the first surface.

A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.