Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.

An inertial sensor includes a support substrate, a sensor main body supported by the support substrate, and a bonding member that is located between the support substrate and the sensor main body and bonds the sensor main body to the support substrate. The sensor main body includes a substrate bonded to the support substrate via the bonding member and a capacitance-type sensor device provided at a side of the substrate opposite to the support substrate. The substrate has a side surface, a first principal surface facing the support substrate, and a recessed step section that is located between the side surface and the first principal surface and connects the side surface to the first principal surface. The bonding member extends along the first principal surface and the step section.

A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.

A semiconductor package with design features, including an isolation structure for internal components and a flexible electrical connection, that minimizes errors due to environmental temperature, shock, and vibration effects. The semiconductor package may include a base having a first portion surrounded by a second portion. A connector assembly may be attached to the first portion. The connector assembly may extend through an opening in the base. A lid attached may be attached to, at least, the second portion. The attached lid may form a hermetically-sealed cavity defined by an upper surface of the first portion, the connector assembly, and an inner surface of the lid. An elastomer pad may be on the first portion and a sub-assembly may be on the elastomer pad. A flexible electrical connection may be formed between the connector assembly and the sub-assembly.

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.

In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material.

The disclosed technology provides solutions for preventing the ingress of potentially harmful materials, such as moisture and debris, into a sensor housing. In some aspects, an ingress-protection sub-assembly is provided. The sub-assembly can include a t-protector mounted to an outer surface of a face-plate, wherein the t-protector is disposed above an inlet in the face-plate, a printed circuit board (PCB) mounted to an inner surface of the face-plate, and a membrane disposed between the PCB and the face-plate. Methods for assembling and mounting a sub-assembly are also provided.

A sensor device includes a first and second Micro-Electro-Mechanical (MEM) structures. The first MEM structure includes a first heating element on a first layer of the first MEM structure. The first heating element includes an input adapted to receive an input signal. The first MEM structure also includes a first temperature sensing element on a second layer of the first MEM structure. The second MEM structure includes a second heating element on a first layer of the second MEM structure and a second temperature sensing element on a second layer of the second MEM structure. An output circuit has a first input coupled to the first temperature sensing element and a second input coupled to the second temperature sensing element.

A sound producing package structure configured to produce sound includes a substrate, a sound producing component and a conductive adhesive layer. The sound producing component is disposed on the substrate, and the sound producing component is configured to generate an acoustic wave corresponding to an input audio signal. The conductive adhesive layer is disposed between the substrate and the sound producing component by a surface mount technology.

A hermetically sealed component may comprise a glass substrate, a device with at least one electrical port associated with the glass substrate, and a glass cap. The glass cap may have at least one side wall. The glass cap may have a shaped void extending therethrough, from top surface of the glass cap to bottom surface of glass pillar. An electrically conductive plug may be disposed within the void, the plug configured to hermetically seal the void. The electrically conductive plug may be electrically coupled to the electrical port. The glass cap may be disposed on the glass substrate, with the at least one side wall disposed therebetween, to form a cavity encompassing the device. The side wall may contact the glass substrate and the glass cap to provide a hermetic seal, such that a first environment within the cavity is isolated from a second environment external to the cavity.