A hermetic package includes a base body, wherein dielectric material of a bottom of the base body is made of an organic material, an optical component mounted on the base body, and inorganic material hermetically enclosing the optical component along all surrounding sides.

The present invention relates to the field of medical devices, and specifically to a packaging structure and a packaging method for a retinal prosthesis implanted chip, including a high-density stimulation electrode component processed by a glass substrate, wherein the stimulation electrode component comprises the glass substrate, and a plurality of stimulation electrodes and a pad structure provided on the glass substrate; the stimulation electrodes are formed through cutting out metal pins on the metal and then pouring with glass; the stimulation electrode component is connected to an ASIC chip; a glass packaging cover is covered on the ASIC chip, the glass packaging cover is provided with a metal feedthrough structure for communicating with the stimulation chip; and the packaging cover covers and encapsulates the pad structure. In the packaging structure of the present invention, the substrate and the packaging cover are both made of a glass material, and thereby enable manufacture of a high-density stimulation electrode array, and the metal feedthrough structure is directly used on the glass cover, which facilitates wiring and achieves good sealing performance of the package cover.

The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a cap substrate is bonded to a device substrate. The cap substrate comprises a first trench, a second trench, and an edge trench recessed from at a front-side surface of the cap substrate. A stopper is disposed within the first trench and raised from a bottom surface of the first trench. The stopper has a top surface lower than the front-side surface of the cap substrate.

An inertial sensor includes a support substrate, a sensor main body supported by the support substrate, and a bonding member that is located between the support substrate and the sensor main body and bonds the sensor main body to the support substrate. The sensor main body includes a substrate bonded to the support substrate via the bonding member and a capacitance-type sensor device provided at a side of the substrate opposite to the support substrate. The substrate has a side surface, a first principal surface facing the support substrate, and a recessed step section that is located between the side surface and the first principal surface and connects the side surface to the first principal surface. The bonding member extends along the first principal surface and the step section.

A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.

The application relates to structures, e.g. substrates for supporting semiconductor die. The substrate defines a frame which lateral surrounds one or more die and is provided in contact with at least one side surface of the die, wherein the frame defines upper and lower surfaces of the substrate.

A micromechanical component, having a carrier wafer having at least one micromechanical structure that is situated in a cavern; a thin-layer cap situated on the carrier wafer, by which the cavern is hermetically sealed; and a cap wafer situated on the thin-layer cap in the region of the cavern having the micromechanical structure, the cap wafer hermetically sealing a region of the thin-layer cap above the cavern.

A MEMS device includes a substrate, a MEMS element portion disposed on a surface of the substrate, a cap having a cavity formed to oppose the MEMS element portion, and a diffusion prevention layer formed on at least a portion of the cap, wherein at least one of the cap and the substrate includes a bonding layer disposed outside of the cavity, and wherein the cap includes a spreading prevention portion disposed between the bonding layer and the cavity and having a V-shape in cross-section.