Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.

A device with an out-of-plane electrode includes a device layer positioned above a handle layer, a first electrode defined within the device layer, a cap layer having a first cap layer portion spaced apart from an upper surface of the device layer by a gap, and having an etch stop perimeter defining portion defining a lateral edge of the gap, and an out-of-plane electrode defined within the first cap layer portion by a spacer.

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

A method of fabricating a MEMS device includes performing an atomic layer deposition (ALD) process to deposit a barrier layer such as Aluminum Oxide (AI2O3) having a thickness on a sacrificial layer deposited on a substrate. A portion of the barrier layer is removed to form an etched structure defined as a trench. An epi-polysilicon cap layer is epitaxially growth on the barrier layer and the entire etched structure. A portion of the epi-polysilicon cap layer has been removed to form a plurality of openings. The sacrificial layer is etched away leaving a cavity below the etched openings. A refill epi-polysilicon layer is epitaxially grown in the openings and seals the entire openings after a gap is formed between the cap layer and the substrate.

At least one semiconductor component is packaged by covering at least one partial surface of the at least one semiconductor component with at least one chemically or physically dissoluble sacrificial material; surrounding the at least one semiconductor component at least partially with a photoablatable packaging material; exposing the sacrificial material on the at least one partial surface of the at least one semiconductor component at least partially by forming at least one trench through at least the packaging material using a light beam; and exposing the at least one partial surface of the at least one semiconductor component at least partially by at least partially removing the previously exposed sacrificial material using a chemical or physical removal method to which the packaging material has a higher resistance than the sacrificial material.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer, wherein the beam structure includes a plurality of strip structures. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.