A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

A method for manufacturing a micromechanical layer structure, including: providing a first protective layer patterned to have at least one opening which is filled with sacrificial layer material; depositing a functional-layer layer structure; producing a first opening in the functional-layer layer structure to at least one opening of the first protective layer, so that in at least one of the layers of the functional-layer layer structure; depositing a second protective layer so that the first opening is filled with material of the second protective layer; patterning the second protective layer and the filled first opening to have a second opening to the first protective layer, the second opening having the same or a lesser width than the first opening; removing sacrificial layer material at least in the opening of the first protective layer; and removing protective layer material at least in the second opening.

A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.

A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

A method for setting a pressure in a cavern formed using a substrate and a substrate cap, the cavern being part of a semiconductor system, including an additional cavern formed with using the substrate and of the substrate cap, a microelectromechanical system being situated in the cavern, an additional microelectromechanical system being situated in the additional cavern, a diffusion area being situated in the substrate and/or in the substrate cap, the method includes a gas diffusing with the aid of the diffusion area from the surroundings into the cavern, during the diffusing, a diffusivity and/or a diffusion flow of the gas from the surroundings into the cavern being greater than an additional diffusivity and/or an additional diffusion flow of the gas from the surroundings into the additional cavern, and/or during the diffusing, the additional cavern being at least essentially protected from a penetration of the gas into the additional cavern.

An inertial sensor includes a support substrate, a sensor main body supported by the support substrate, and a bonding member that is located between the support substrate and the sensor main body and bonds the sensor main body to the support substrate. The sensor main body includes a substrate bonded to the support substrate via the bonding member and a capacitance-type sensor device provided at a side of the substrate opposite to the support substrate. The substrate has a side surface, a first principal surface facing the support substrate, and a recessed step section that is located between the side surface and the first principal surface and connects the side surface to the first principal surface. The bonding member extends along the first principal surface and the step section.

A hermetically sealed component may comprise a glass substrate, a device with at least one electrical port associated with the glass substrate, and a glass cap. The glass cap may have at least one side wall. The glass cap may have a shaped void extending therethrough, from top surface of the glass cap to bottom surface of glass pillar. An electrically conductive plug may be disposed within the void, the plug configured to hermetically seal the void. The electrically conductive plug may be electrically coupled to the electrical port. The glass cap may be disposed on the glass substrate, with the at least one side wall disposed therebetween, to form a cavity encompassing the device. The side wall may contact the glass substrate and the glass cap to provide a hermetic seal, such that a first environment within the cavity is isolated from a second environment external to the cavity.

An electronic component includes a piezoelectric substrate, a first functional element, a first wiring, insulating films, a first conductive film, and a first external connection terminal. The first functional element is disposed on the piezoelectric substrate. The first wiring is disposed on the piezoelectric substrate, and is electrically connected to the first functional element. The insulating films are disposed on the piezoelectric substrate, and define a first hollow portion in which the first functional element is included. The first conductive film is disposed on the insulating films, and has a portion that passes through the insulating films and is electrically connected to the first wiring. The first external connection terminal is provided on the first conductive film, and is disposed at a position overlapping at least a portion of the first functional element in a plan view as viewed in the thickness direction of the piezoelectric substrate.

A physical quantity sensor includes a sensor element (acceleration sensor element) and a substrate (package) to which the sensor element is attached using a bonding material (resin adhesive), in which, when an elastic modulus of the bonding material is e, 2.0 GPa<e<7.8 GPa is satisfied.