A method for producing a micromechanical component having a substrate and a cap that are connected to each other and that enclose a first cavity, where a first pressure prevails inside the first cavity and a first gas mixture having a first chemical composition is enclosed within the first cavity, includes, in a first method step, developing in the substrate or cap an access opening connecting the first cavity to an environment of the micromechanical component, in a second method step, setting the first pressure and/or the first chemical composition in the first cavity, in a third method step, sealing the access opening using a laser by introduction of energy or heat into an absorbing part of the substrate or the cap, and, in a fourth method step, performing a thermal treatment of the substrate or the cap, thereby reducing temperature gradients in the substrate or in the cap.

A microelectromechanical structure, including a functional element situated in a cavity of the microelectromechanical structure. The functional element includes an aluminum nitride layer. The cavity is closed by a cap layer. The cap layer includes epitaxial silicon. A method for manufacturing a micromechanical structure is also described.

A MEMS device manufacturing method and a MEMS device are provided which can enhance a degree of vacuum inside an operation space and reduce the installation cost and maintenance cost of a manufacturing apparatus as well as manufacturing cost. A MEMS device includes a MEMS device wafer having an operation element formed on a Si substrate, and a CAP wafer provided to cover the MEMS device wafer to form an operation space for operably accommodating the operation element. The CAP wafer is made of silicon and includes vent holes formed to communicate with the operation space. The operation space is sealed by performing a heat treatment in a hydrogen gas atmosphere to close the vent holes by silicon surface migration of the CAP wafer with the CAP wafer and the MEMS device wafer bonded.

A method for setting a pressure in a cavity formed with the aid of a substrate and a substrate cap, a microelectromechanical system being situated in the cavity, the substrate including a main extension plane. The method includes the following steps: in a first step a clearance is created in the substrate cap, the clearance connecting the cavity to the surroundings, a first clearance end of the clearance being formed on a first surface of the substrate cap that faces away from the cavity, a second clearance end of the clearance being formed on a cavity-side second surface of the substrate cap, the first clearance end and the second clearance end being situated at a distance from one another at least in a first direction which is parallel to the main extension plane; in a second step, after the first step, the clearance is sealed.

A semiconductor device package includes a substrate, a lid, a MEMS device and a gel. The lid is disposed on the substrate and defines a cavity together with the substrate. The MEMS device is disposed in the cavity. The gel covers the MEMS component. The lid is attached to the substrate through a silicone-based adhesive.

A multi-layer sealing film for high seal yield is provided. In some embodiments, a substrate comprises a vent opening extending through the substrate, from an upper side of the substrate to a lower side of the substrate. The upper side of the substrate has a first pressure, and the lower side of the substrate has a second pressure different than the first pressure. The multi-layer sealing film covers and seals the vent opening to prevent the first pressure from equalizing with the second pressure through the vent opening. Further, the multi-layer sealing film comprises a pair of metal layers and a barrier layer sandwiched between metal layers. Also provided is a microelectromechanical systems (MEMS) package comprising the multilayer sealing film, and a method for manufacturing the multi-layer sealing film.

A physical quantity sensor includes a substrate, a movable section displaceable in a first direction with respect to the substrate, first and second movable electrode sections provided in the movable section, a first fixed electrode section fixed to the substrate and disposed to be opposed to the first movable electrode section in the first direction, a second fixed electrode section fixed to the substrate and disposed to be opposed to the second movable electrode section in the first direction, a restricting section configured to restrict a movable range in the first direction of the movable section, a first wire provided on the substrate and electrically connected to the first fixed electrode section, and a second wire provided on the substrate and electrically connected to the second fixed electrode section. The first wire and the second wire are respectively cross the restricting section in a plan view of the substrate.

A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed to correspond to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a packaging layer, and at least a portion of the packaging layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the packaging layer define a chamber.

An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.

A method for manufacturing a micromechanical layer structure, including: providing a first protective layer patterned to have at least one opening which is filled with sacrificial layer material; depositing a functional-layer layer structure; producing a first opening in the functional-layer layer structure to at least one opening of the first protective layer, so that in at least one of the layers of the functional-layer layer structure; depositing a second protective layer so that the first opening is filled with material of the second protective layer; patterning the second protective layer and the filled first opening to have a second opening to the first protective layer, the second opening having the same or a lesser width than the first opening; removing sacrificial layer material at least in the opening of the first protective layer; and removing protective layer material at least in the second opening.