A manufacturing method of an electronic device includes a process that forms a protective layer on at least a portion of the first base body to which a third base body is to be bonded, a process that performs first bonding of a second base body to the first base body, a process that performs a first etching of the second base body bonded by the first bonding, a process that removes the protective layer using a second etching, and a process that performs second bonding of the third base body to the first base body. In the first etching, an etching rate of the second base body is faster than those of the first base body and the protective layer, and in the second etching, an etching rate of the protective layer is faster than those of the first base body and the second base body.

A sensor device includes a semiconductor platform with a sensor element, a top casing element and a bottom casing element. The top casing element contacts the bottom casing element to form a rigid casing defining a cavity, and the top casing element furthermore contacts the semiconductor platform so that the semiconductor platform is positioned in the cavity and so that a selected region of the semiconductor platform, including the sensor element is contactable by the environment. Furthermore, the top casing element, the bottom casing element, and the selected region of the semiconductor platform are arranged so that the cavity is hermetically sealed.

A method of manufacturing an electronic device in which a second substrate (functional element) containing silicon and a third substrate (lid body) containing silicon are bonded to a first substrate containing alkali metal ions by anode bonding includes a first process of performing the anode bonding to bond the second substrate to a surface of the first substrate; a second process of removing at least a portion of the surface of the first substrate to which the third substrate is to be bonded by the anode bonding and exposing a bonding surface after the first process; and a third process of performing the anode bonding to bond the third substrate to the bonding surface of the first substrate.

A transducer, and a method for manufacturing the transducer are provided. The transducer includes a substrate-side electrode provided in one side of an insulative substrate and an opposite plate including an opposite electrode disposed opposite to the substrate-side electrode, and which performs a function such as a reduction in impedance, conversion of capacitance, signal amplification, thereby achieving size reduction of the transducer itself. An upper plate is made of a silicon monocrystal and is arranged so as to face a substrate-side electrode. In the upper plate, an integrated circuit section which is an impurity region of an IC circuit is formed by a thermal diffusion method or an ion implantation method. By this transducer, an improvement in conversion efficiency, an improvement in productivity, and a size reduction of a mount system are achieved.

A wafer-level packaging method for MEMS structures that are desired to be encapsulated in a hermetic cavity and that need the transfer of at least a single or multiple electrical leads to the outside of the cavity without destroying the hermeticity of the cavity. Lead transfer is achieved using vertical feedthroughs that are patterned on the capping substrate within the same fabrication step to produce the encapsulating cavity. Furthermore, the structure of the vertical feedthroughs and via openings to reach these feedthroughs are arranged in such a way that conventional wirebonding would be sufficient to connect the vertical feedthroughs to the outer world, without a need for conductor-refill inside the via openings. The method is compatible with low-temperature thermocompression-based bonding/sealing processes using various sealing materials such as thin-film metals and alloys, and also with the silicon-glass anodic or silicon-silicon fusion bonding processes.

A physical quantity sensor includes a base substrate and an element piece bonded to the base substrate. The element piece includes fixed portions fixed to the base substrate, a first fixed electrode finger supported on the fixed portion, a second fixed electrode finger supported on the fixed portion, a fixed portion that is positioned between the fixed portions and is fixed to the base substrate, a movable portion that is displaceable with respect to the fixed portion, an elastic portion that links the fixed portion and the movable portion, a first movable electrode finger that is supported on the movable portion and that is arranged facing the first fixed electrode finger, and a second movable electrode finger that is supported on the movable portion and is arranged facing the second fixed electrode finger.

A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

Systems, processes and devices are provided for wafer-level fabrication of a resonator. A process is provided that includes chemical etching of glass and silicon, high-temperature glassblowing, controlling assembly of at least one YIG sphere relative to a nest structure, and plasma assisted wafer bonding. The process can include formation of loop coils and spherical coils defined by the glassblowing process including inner and outer hemispherical structures. The inner hemispherical structure may provide loops to drive and detect resonance in YIG spheres. Processes discussed herein allow for placement of loops in close proximity (e.g., few microns) to ferrimagnetic elements. The outer hemisphere may provide harmonic magnetic coils for frequency tuning. Embodiments are also directed to a resonator including first and second wafer-level glass blown wafer stacks each with inner hemisphere and outer hemispheres. The resonator includes coupling loop coils, tuning coils, and a sphere element nested between glass blown wafer stacks.

A method for forming a MEMS structure for an inertial sensor from fused silica includes: depositing a conductive layer on one or more selected regions of a first surface of a fused silica substrate, and illuminating areas of the fused silica substrate with laser radiation in a pattern defining features of the MEMS structure for an inertial sensor. A masking layer is deposited at least on the one or more selected regions of the first surface of the fused silica substrate where the conductive layer has been deposited, such that the illuminated areas of the fused silica substrate remain exposed. A first etch of the exposed areas of the fused silica substrate is performed so as to selectively etch the pattern defining features of the MEMS structure for an inertial sensor.

A method of forming an infrared detector includes defining an optical window in a cover substrate. Defining the optical window includes forming a multilayer interference filter or a periodic diffraction grating on an upper surface of the optical window and a periodic diffraction grating on the lower surface of the optical window. The method also includes performing anodic bonding of a spacer onto the cover substrate, transferring the cover substrate provided onto a base substrate, and hermetically bonding the spacer onto the base substrate.