A physical quantity sensor includes a sensor element, and a container (package) that stores the sensor element on a bottom plate (first base material). An outer edge of the container has a rectangular shape in a plan view. Lengths of each side of the rectangular shape are 2.0 mm or more and 7.0 mm or less, a thickness of the container is 0.50 mm or more and less than 1.85 mm, and when a thickness of the bottom plate is t, 0.4 mmt1.1 mm is satisfied.

A sensor device is constructed to maintain a high glass strength to avoid the glass failure at low burst pressure, resulting from the sawing defects located in the critical high stress area of the glass pedestal as one of the materials used for construction of the sensor. This is achieved by forming polished recess structures in the critical high stress areas of the sawing street area. The sensor device is also constructed to have a robust bonding with the die attach material by creating a plurality of micro-posts on the mounting surface of the glass pedestal.

A method for manufacturing a gas detector by a micro-electrical-mechanical systems (MEMS) process. The method includes providing a MEMS wafer including a plurality of mutually adjacent units; forming a gas sensing material layer on the MEMS wafer; bonding a structure reinforcing layer and the MEMS wafer through anode bonding; providing an adhesive tape; performing a cutting process to form a gas detection unit; and adhering the gas detection unit on a substrate by the adhesive tape to form a gas detector. The structure reinforcing layer is capable of enhancing the strength of a device and preventing edge collapsing, and hence enhancing the overall yield rate and reducing costs.

A ceramic substrate is mainly constituted of ceramic, and has a first main surface and a second main surface located opposite to the first main surface. A recessed portion recessed toward a first main surface side is formed in the second main surface. A wire portion extending from an outer peripheral surface of the ceramic substrate to inside of the recessed portion is formed, and a bottom portion located on the first main surface side in the recessed portion has a portion thinner than another portion of the ceramic substrate other than the bottom portion.

A microelectro-mechanical system (MEMS) device includes a substrate of a semiconductor material having thereon a movable component, a glass substrate bonded to the substrate, an electrostatic biasing layer disposed between the movable component and the glass substrate. A cavity is defined between the movable component and a top surface of the glass substrate. The electrostatic biasing layer completely overlaps with the movable component.

A sensor for measuring, for example, the pressure of a gas or other fluid comprising a glass substrate having an aperture defined therethrough. A semiconductor die defining a diaphragm is anodically bonded to the glass substrate such that the diaphragm is exposed via the aperture. At least one electrically conductive element in electrical communication with the semiconductor die is arranged on a surface of the glass substrate.

A physical quantity sensor includes a base substrate and an element piece bonded to the base substrate. The element piece includes fixed portions fixed to the base substrate, a first fixed electrode finger supported on the fixed portion, a second fixed electrode finger supported on the fixed portion, a fixed portion that is positioned between the fixed portions and is fixed to the base substrate, a movable portion that is displaceable with respect to the fixed portion, an elastic portion that links the fixed portion and the movable portion, a first movable electrode finger that is supported on the movable portion and that is arranged facing the first fixed electrode finger, and a second movable electrode finger that is supported on the movable portion and is arranged facing the second fixed electrode finger.

A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.

A physical quantity sensor includes a base substrate; a movable unit which is provided so as to be displaced with respect to the base substrate by facing the base substrate; a first fixed electrode and a second fixed electrode which are disposed on the base substrate by facing the movable unit; and a plurality of protrusion portions which are disposed at a position overlapped with the movable unit in a planar view, on the movable unit side of the base substrate, in which the protrusion portion includes a conductive layer with the same potential as that of the first fixed electrode and the second fixed electrode, and an insulating layer which is provided on a side opposite to the base substrate with respect to the conductive layer.