Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

An integrated MEMS electronic circuit that comprises a circuit wafer; a micromechanical structure being attached to a first surface of the circuit wafer and electrically coupled to an integrated circuit formed under said first surface. A capping chip having side surfaces substantially perpendicular to its main surfaces comprises a recess and is bonded to the first surface of the circuit wafer such that said micromechanical structure is enclosed in a cavity comprising the recess in the capping chip. Both the circuit wafer and the capping wafer can be further thinned while exposing at least one connection pad on the first surface of the circuit wafer that is not covered by the capping chip and that is coupled electrically to the integrated circuit.

For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

Method of manufacturing a microfluidic device comprising an inflexible polymeric substrate, one or more flexible polymeric substrate(s) and one or more microfluidic channel(s) enclosed between the substrates comprising a) providing a master form including rim protrusions defining an enveloping shape for the microfluidic channel(s) to be produced and enclosed between the substrates, b) placing one or more flexible polymeric substrate(s) each having a layer thickness of less than 800 m onto the master form, wherein one flexible polymeric substrate is in contact with the rim protrusions of the master form, c) placing an inflexible polymeric substrate with a layer thickness of equal to or more than 800 m onto the flexible polymeric substrate(s), and d) ultrasonically welding the one or more flexible polymeric substrate(s) and the inflexible polymeric substrate at the rim protrusions. By the inventive method microfluidic devices via ultrasonic welding without using energy directors can be obtained.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

Disclosed is a flexible electronic circuit substrate that includes a device that is fabricated from layers of the flexible electronic circuit substrate as part of construction of the flexible electronic circuit substrate. Such devices could be functional units such as micro electro mechanical devices (MEMS) devices such as micro-accelerometer sensor elements, micro flow sensors, micro pressure sensors, etc.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

The present disclosure relates to a micro-electromechanical system (MEMs) package. In some embodiments, the MEMs package has a plurality of conductive interconnect layers disposed within a dielectric structure over an upper surface of a first substrate. A heating element is electrically coupled to a semiconductor device within the first substrate by one or more of the plurality of conductive interconnect layers. The heating element is vertically separated from the first substrate by the dielectric structure. A MEMs substrate is coupled to the first substrate and has a MEMs device. A hermetically sealed chamber surrounding the MEMs device is disposed between the first substrate and the MEMs substrate. An out-gassing material is disposed laterally between the hermetically sealed chamber and the heating element.