A method and system for an enhanced reforming process employing a pressure swing absorber. An off-gas from the pressure swing absorber is divided with a first portion sent back into a reforming reactor and a second portion sent to a heat generator for the reforming process. The first off-gas portion from the pressure swing absorber can be pressurized by a compressor and reintroduced into a fluidized bed reactor.

Disclosed herein are processes and systems for removing heavy C5+ hydrocarbon components from a natural gas feed gas by subjecting the natural gas feed gas stream to an adsorber. The adsorber in the processes and systems described herein operating at a pressure that may be associated with improved adsorption capacity and longer breakthrough time.

Disclosed herein are processes and systems for removing heavy C5+ hydrocarbon components from a natural gas feed gas by subjecting the natural gas feed gas stream to an adsorber. The adsorber in the processes and systems described herein operating at a pressure that may be associated with improved adsorption capacity and longer breakthrough time.

The present invention is directed to a method and system of purifying hydrogen supplied from a storage cavern, particularly to removing methane and other hydrocarbons from the hydrogen withdrawn from the cavern by using selective adsorption. The adsorbed impurities can be removed from the adsorbent by increasing the temperature, reducing the pressure, or a combination of both.

The present invention is directed to a method and system of purifying hydrogen supplied from a storage cavern, particularly to removing methane and other hydrocarbons from the hydrogen withdrawn from the cavern by using selective adsorption. The adsorbed impurities can be removed from the adsorbent by increasing the temperature, reducing the pressure, or a combination of both.

A device for performing electrolysis of water is disclosed. The device comprising: a semiconductor structure comprising a surface and an electron guiding layer below said surface, the electron guiding layer of the semiconductor structure being configured to guide electron movement in a plane parallel to the surface, the electron guiding layer of the semiconductor structure comprising an InGaN quantum well or a heterojunction, the heterojunction being a junction between AlN material and GaN material or between AlGaN material and GaN material; at least one metal cathode arranged on the surface of the semiconductor structure; and at least one photoanode arranged on the surface of the semiconductor structure, wherein the at least one photoanode comprises a plurality of quantum dots of In.sub.xGa.sub.(1−x)N material, wherein 0.4≤x≤1. A system comprising such device is also disclosed.

A system for producing an organic substance, including: a synthesis gas generation furnace for producing a synthesis gas by partially oxidizing a waste including a carbon source; a synthesis gas purification unit connected to the synthesis gas generation furnace and purifying the synthesis gas generated in the synthesis gas generation furnace to reduce an impurity concentration in the synthesis gas; and an organic substance synthesis unit which is connected to the synthesis gas purification unit and generates an organic substance from the synthesis gas purified in the synthesis gas purification unit, wherein the synthesis gas purification unit includes a detection unit for measuring an impurity concentration in the synthesis gas.

A system for producing an organic substance, including: a synthesis gas generation furnace for producing a synthesis gas by partially oxidizing a waste including a carbon source; a synthesis gas purification unit connected to the synthesis gas generation furnace and purifying the synthesis gas generated in the synthesis gas generation furnace to reduce an impurity concentration in the synthesis gas; and an organic substance synthesis unit which is connected to the synthesis gas purification unit and generates an organic substance from the synthesis gas purified in the synthesis gas purification unit, wherein the synthesis gas purification unit includes a detection unit for measuring an impurity concentration in the synthesis gas.

The present invention relates to the use of a zeolitic adsorbent material based on faujasite (FAU) zeolite crystals, the Si/AI mole ratio of which is between 1.00 and 1.20, and the non-zeolitic phase (NZP) content of which is such that 0<NZP≤25%, for the non-cryogenic separation of industrial gases by (V)PSA, in particular of the air gases.

The invention also relates to respiratory assistance machines comprising at least said zeolitic adsorbent material.

An internal air adjustment device that includes a first composition adjustment unit and a second composition adjustment unit. The first composition adjustment unit separates supply air from external air, the supply air having a composition that differs from a composition of the external air, and supplies the supply air into a transport container. The second composition adjustment unit separates discharge air from internal air, the discharge air having a composition that differs from a composition of the internal air, and discharges the discharge air to outside of the transport container. The internal air adjustment device is capable of properly controlling the composition of the internal air in the transport container.