A catalytic material including particles formed of a catalytic core material having a thermally resistant porous shell coated over the catalytic core material. An oxygen storage material is dispersed within the thermally resistant porous shell. In an example, the oxygen storage material is ceria. The catalytic material can further include a catalytic support, wherein the particles are deposited on the catalytic support. The catalytic support can be a powdered oxide including a material selected from the group consisting of alumina, silica, zirconia, niobia, ceria, titania, and combinations thereof. The catalytic core can include an element selected from the group consisting of Pt, Pd, Rh, Co, Ni, Mn, Cu, Fe, Au, Ag, and combinations thereof. The porous shell can be selected from materials consisting of alumina, baria, ceria, magnesia, niobia, silica, titania, yttria, and combinations thereof.

An object of the present invention is to increase the reduction performance of nitrogen oxides compared to existing three-way catalysts; simultaneously inhibit the emission of ammonia and nitrous oxide; simplify a process by means of a method of further doping an iridium-ruthenium catalyst into a commercial three-way catalyst; and expand the scope of application. The present invention provides a catalyst for simultaneously inhibiting the emission of ammonia and nitrous oxide by doping an iridium-ruthenium catalyst component into a three-way catalyst (TWC), a diesel oxidation catalyst, or a lean NOx trap supported on a honeycomb support.

An abatement apparatus includes: an abatement chamber configured to receive aneffluent stream and to provide an abated effluent stream; a wet scrubber located downstream of the abatement chamber, the wet scrubber being configured to receive the abated effluent stream and provide a scrubbed effluent stream; and a catalyst bed located downstream of the wet scrubber, the catalyst bed being configured to receive the scrubbed effluent stream and provide a remediated effluent stream. In this way, undesirable compounds present in the abated effluent stream, which are there because they were either already present in the effluent stream and were insufficiently abated by the abatement chamber or because they are abatement by-products generated within the abatement chamber, can be remediated, removed or reduced by the catalyst bed prior to being vented by the abatement apparatus.

A molecular sieve confined noble metal catalyst for CO-SCR denitrification, a preparation method and an application thereof are provided. The catalyst includes a molecular sieve carrier and Ir metal nanoclusters loaded in the molecular sieve carrier through confined encapsulation. The preparation method includes the following steps: mixing a first metal precursor solution with a first ligand to obtain a first mixed solution; mixing a second metal precursor solution with a second ligand to obtain a second mixed solution; mixing a silicon source, an aluminum source, an alkali and a solvent to obtain a molecular sieve precursor solution; mixing the molecular sieve precursor solution with the first mixed solution, then adding the second mixed solution for hydrothermal crystallization reaction, and then centrifugally washing, drying and calcining to obtain the catalyst.

A surgical treatment system for contaminated air streams having particulate contamination, polar contamination and/or nonpolar contamination in the gas or vapor stream. A surgical smoke plume treatment system and method provide or define a multi-stage treatment process that mechanically filters the air stream, followed by nonpolar decontamination and then polar decontamination or treatment. The system may be used stand alone or incorporated and used with other surgical instruments or incorporated into an air handler adapted to decontaminate an air stream. A desiccant may optionally be used to remove water from the air stream.

A method for controlling the semiconductor process environment is provided. The method includes placing a cleaning member in a processing chamber of a semiconductor processing tool. The method also includes creating a vacuum in the processing chamber. Furthermore, the method includes eliminating at least one compound from the residues in the processing chamber by the cleaning member. The cleaning member is configured to facilitate physical adsorption, catalysis, or chemical reactions with the residues in the processing chamber.