A method for removing a halogen fluoride in a mixed gas by reacting the mixed gas containing a halogen fluoride including bromine or iodine with a removing agent, wherein the removing agent is a chloride, bromide or iodide of potassium, sodium, magnesium, calcium and barium. Also disclosed is a quantitative analysis method as well as a quantitative analyzer for a gas component contained in a hydrogen fluoride mixed gas, the method characterized by reacting a mixed gas containing a halogen fluoride and another gas component with a removing agent, thereby removing the halogen fluoride in the mixed gas, further removing produced by-products, and quantitatively analyzing a residual gas by a gas chromatograph.

The invention discloses an integrated deep purification device for removing sulfur, nitrate, dust and fluorine. The core component of the device is a purification system; the purification system comprises a headstock, a container and a purification system which are connected with the back of the headstock, and the purification system is arranged in the container, and comprises a purification tower I and a purification tower II, wherein the purification tower I comprises a tower body I, corona electrodes I and conductive filters; the purification tower II comprises a tower body II, corona electrodes II, a sprinkler system and electrofiltration coupling units.

A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.

Disclosed is a system for treating exhaust fluid from semiconductor manufacturing equipment in which cleaning gases decomposed by a plastic apparatus alternately flow towards a front rotor region (a main rotor unit) and a rear rotor region (a subsidiary rotor unit) of a booster pump and then flow towards a dry pump, and thus uniformly react with process byproducts present throughout the whole area in a vacuum pump including the booster pump and the dry pump so as to improve removal efficiency of the process byproducts. Further, the retention time of the cleaning gases decomposed by the plasma apparatus in the vacuum pump is increased by adjusting the pressure in the pump with the rotational speed of a motor, and thus the reaction time of the cleaning gases with the process byproducts is increased, so as to further improve removal efficiency of the process byproducts, such as SiO.sub.2 powder.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

An agent for removing a halogen gas, such as chlorine, in a waste gas by means of reduction; a method for producing this agent; a method for removing a halogen gas by use of this agent; and a system for removing a halogen gas. The agent for removing the halogen gas contains at least pseudo-boehmite, that serves as a host material, and a sulfur-containing reducing agent, that serves as a guest material. 1-8% by weight of the reducing agent, in terms of elemental sulfur, based on the total amount of the pseudo-boehmite and sulfur-containing reducing agent is present in the agent. At least one inorganic compound selected from among oxides, carbonates salts and hydrocarbon salts of alkaline earth metal elements, transition metal elements and zinc group elements is additionally contained in the agent as a third component.

A method for treating a fluorine element-containing exhaust gas including a first step of contacting the fluorine element-containing exhaust gas with water and a second step of contacting a gas component discharged from the first step with a basic aqueous solution including a reducing agent.

A method for preparing Cl—SO.sub.2NHSO.sub.2Cl including a step of chlorinating sulphamic acid with at least one chlorinating agent and at least one sulphur-containing agent, the method resulting in a flow F1, preferably liquid, including Cl—SO.sub.2NHSO.sub.2Cl and a gas stream F2 including HCl and SO.sub.2, the method including a step a) of treating the gas stream F2. Also, a method for preparing LiFSI including the abovementioned method for preparing Cl—SO.sub.2NHSO.sub.2Cl.

Described herein is a method for reducing corrosion of corrodible metals in machinery. More particularly, described herein is a method for removing corrosive gases and particulates from an air flow. A method of removing corrosive contaminants from a fluid stream employing a filter having a multi-layer filtration media is described herein. Also described herein is a method of increasing the operational lifetime of machinery by reducing corrosion in the machine.

A gas purification system may include: a circulation gas pipe in which a second end is connected at a first position to a second pipe through which gas is supplied from a gas supply source; a booster pump; a gas purification unit; a first tank in the circulation gas pipe; a first valve positioned between the gas supply source and the first position, the first valve having an open position and a closed position; and a second valve positioned between the first tank and the second end, the second valve having an open position and a closed position, the second valve configured to be in the closed position when the first valve is in the open position.