The present application provides a method of treating flue gas in a duct with an injection system, the flue gas comprising an acid gas and/or one or more metal components, the injection system comprising at least one injection nozzle in communication with an air supply and a supply of sorbent; wherein the method comprises supplying air and sorbent through the nozzle to the duct such that the penetration of the sorbent into the duct is represented by the formula: Y=(D.sub.na(p.sub.nV.sub.n.sup.2/p.sub.fV.sub.f.sup.2).sup.0.5(x/D.sub.n).sup.0.33)/D.sub.f where Y is the fraction of duct penetration depth of the sorbent when the duct length is x, D.sub.n is the diameter of the nozzle, D.sub.f is the depth of the duct, p.sub.n and p.sub.f are the densities of the air supply and flue gas, respectively V.sub.n and V.sub.f are the velocities of the air exiting the nozzle and the flue gas, respectively, and where a is between 0.3 and 1.0 and where Y is between 0.3 and 0.8.

An improved process for deacidizing a gaseous mixture with reduced overall energy costs is described. The process involves contacting the gaseous mixture with at least one of a vaporizing compound, a vaporized compound, a vaporizing solution of compound and a vaporized solution of compound, and forming a liquid or solid reaction product that can be easily separated from the gaseous mixture.

A semiconductor processing system includes a vacuum pump having an inlet and an outlet, with the inlet of the vacuum pump configured to be in fluid communication with an outlet of a semiconductor reactor, and with the vacuum pump configured to output an exhaust of waste gases from the reactor at the outlet of the vacuum pump. The semiconductor processing system further includes a water scrubber system at the outlet of the vacuum pump, which has a vertical orientation relative to the pump and has an inlet and at least one mixing chamber. The inlet is in fluid communication with the outlet of the vacuum pump and the mixing chamber. The scrubber system is configured to maintain the temperature of exhaust at the output of the pump, while the exhaust is directed to the mixing chamber, and to inject water into the exhaust to remove water reactive products in the exhaust.

The present disclosure provides separation processes for removing heavy organics that are formed in various production processes of HCFO-1233zd(E). Such separation processes allow for the recovery and/or separation of the heavy organics from reactants that are used to form HCFO-1233zd(E), including HF. Such separation or recovery processes may utilize various separation techniques (e.g., decanting, liquid-liquid separation, distillation, and flash distillation) and may also utilize the unique properties of azeotropic or azeotrope-like compositions. Recovery of the heavy organic that is substantially free from HF may allow for their use in subsequent manufacture processes or disposal.

A method includes injecting a feed stream including a hydrogen halide and water into a vapor liquid separator. The feed stream has a liquid phase and a vapor phase. The method further includes separating the liquid phase and the vapor phase in the vapor liquid separator to form condensate and vapor, and discharging the condensate from the vapor liquid separator in a liquid stream. The method also includes discharging the vapor from the vapor liquid separator in a vapor stream.

An exhaust gas treatment apparatus which includes a denitration device, a dust collector, and a desulfurization device in order, respectively, in a flow path of exhaust gas discharged from a boiler, wherein a heavy-metal component removal device is provided in the exhaust gas flow path between the dust collector and the desulfurization device. This device is provided with: an absorption tower including a nozzle which sprays acidic absorption liquid on the exhaust gas, a tank which stores liquid which has absorbed a heavy metal, and a pump which supplies the nozzle with the liquid in the tank; a neutralizing tank which neutralizes the liquid drawn from the absorption tower; and a separator which separates the neutralized liquid into a solid and a liquid component. Since a small amount of heavy metal can be removed in the absorption tower, re-emission of the heavy metal by the desulfurization device is prevented.

Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.

The invention relates to a method for cleaning flue gas, the flue gas to be cleaned and a sorption agent starting material in the form of a solid being injected into a reactor chamber of a fluidized-bed reactor, and a liquid being injected into the reactor chamber separately from the flue gas and the sorption agent starting material, the sorption agent starting material being contacted with the liquid in the fluidized-bed reactor and being converted to a sorption agent in the form of a solid.

Process for treating a gas contaminated by at least one element selected from the group consisting of heavy metals, organic compounds, and combinations thereof, wherein a calcium-phosphate reactant (reagent) particle comprising apatite is brought into contact with the contaminated gas at a temperature of at least 30 C. and preferably at most 1100 C. The metal(s) and/or organic compound(s) to be removed from the contaminated gas may be selected among the list of: Al, Ag, As, Ba, Be, Bi, Ce, Co, Cd, Cu, Cr, Fe, Hf, Hg, La, Li, Mg, Mn, Mo, Ni, Pb, Pd, Rb, Sb, Se, Sn, Sr, Th, Ti, U, V, Y, Zn, Zr, VOC, aromatic compounds, PAHs, dioxins, furans, or any mixture thereof. In such process, an alkaline compound particle comprising sodium bicarbonate, sodium carbonate, sodium sesquicarbonate (trona), quick lime, hydrated lime, lime stone or combinations thereof, may be further brought into contact with the contaminated gas.

The present invention relates to a wet scrubbing head design whose horizontal orientation and flooded operating characteristics allow complete wet scrubbing at multiple interaction zones each with different neutralizing reagents. The capacity for multiple scrubbing zones improves overall pollutant removal efficiency by adding polishing interaction zones for particulate and acid gas removal systems or by broadening the range of pollutants being removed by operating with a different neutralizing solution or a combination of these operating conditions. The flooded head design approach allows a single scrubber to accomplish high levels of removal efficiency for multiple pollutants which reduces cost, and footprint interaction complexities of the multiple devices it replaces. Flooded head scrubbers have application in combustion flue gas pollutant removal and in chemical and industrial applications that generate dust, odors and acid gases.