The present invention relates to a catalytic material for the preparation of one or more of 4,4′-methylenedianiline, 2,2′-methylenedianiline, 2,4′-methylenedianiline, and oligomers of two or more thereof, the catalytic material comprising an oxidic support, wherein the oxidic support comprises an element E.sub.OS1 selected from the group consisting of Ti, Zr, Al, Si, and mixtures of two or more thereof, and further comprising a supported material supported on the oxidic support, wherein the supported material comprises an element E.sub.SM1 selected from the group consisting of Ti, Zr, V, Nb, Ta, Mo, W, Ge, Sn, Sc, Y, La, Ce, Nd, Pr, Hf, Cr, Fe, Co, Ni, Cu Zn, Pb and mixtures of two or more thereof. Further, the present invention relates in particular to a process for the preparation of a catalytic material and to a process for the preparation of one or more of 4,4′-methylenedianiline, 2,2′-methylenedianiline, 2,4′-methylenedianiline and oligomers of two or more thereof.

The present invention relates to a catalytic material for the preparation of one or more of 4,4′-methylenedianiline, 2,2′-methylenedianiline, 2,4′-methylenedianiline, and oligomers of two or more thereof, the catalytic material comprising an oxidic support, wherein the oxidic support comprises an element E.sub.OS1 selected from the group consisting of Ti, Zr, Al, Si, and mixtures of two or more thereof, and further comprising a supported material supported on the oxidic support, wherein the supported material comprises an element E.sub.SM1 selected from the group consisting of Ti, Zr, V, Nb, Ta, Mo, W, Ge, Sn, Sc, Y, La, Ce, Nd, Pr, Hf, Cr, Fe, Co, Ni, Cu Zn, Pb and mixtures of two or more thereof. Further, the present invention relates in particular to a process for the preparation of a catalytic material and to a process for the preparation of one or more of 4,4′-methylenedianiline, 2,2′-methylenedianiline, 2,4′-methylenedianiline and oligomers of two or more thereof.

A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ˜10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ˜0.6 V vs Ag/AgCl with current density of 10 mA/cm.sup.2 and is achieved at ˜0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm.sup.2 at ˜1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.

A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ˜10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ˜0.6 V vs Ag/AgCl with current density of 10 mA/cm.sup.2 and is achieved at ˜0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm.sup.2 at ˜1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.

Disclosed are a catalyst for preparing a synthetic gas through dry reforming, a method preparing the catalyst, and a method using the catalyst for preparing the synthetic gas. The catalyst may include: a support including regularly distributed mesopores; metal nanoparticles supported on the support; and a metal oxide coating layer coated on a surface of the support.

Embodiments of catalyst systems and methods of synthesizing catalyst systems are provided. The catalyst system may include a core comprising a zeolite; and a shell comprising a microporous fibrous silica. The shell may be in direct contact with at least a majority of an outer surface of the core. The catalyst system may have a Si/Al molar ratio greater than 5. At least a portion of the shell may have a thickness of from 50 nanometers (nm) to 600 nm.

Embodiments of catalyst systems and methods of synthesizing catalyst systems are provided. The catalyst system may include a core comprising a zeolite; and a shell comprising a microporous fibrous silica. The shell may be in direct contact with at least a majority of an outer surface of the core. The catalyst system may have a Si/Al molar ratio greater than 5. At least a portion of the shell may have a thickness of from 50 nanometers (nm) to 600 nm.

A pillar shaped honeycomb structure includes: an outer peripheral wall; and porous partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells penetrating from one end face to other end face to form a flow path, wherein at least one cell of the cells has a magnetic substance coated with glass.

A pillar shaped honeycomb structure includes: an outer peripheral wall; and porous partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells penetrating from one end face to other end face to form a flow path, wherein at least one cell of the cells has a magnetic substance coated with glass.

A photocatalytic device includes a substrate having a surface, and an array of conductive projections supported by the substrate and extending outward from the surface of the substrate. Each conductive projection of the array of conductive projections has a semiconductor composition. The semiconductor composition establishes a photochemical diode. The surface may be nonplanar such that subsets of the array of conductive projections are oriented at different angles.