A silicon carbide porous body includes: (A) silicon carbide particles as an aggregate; and (B) at least one selected from the group consisting of metallic silicon, alumina, silica, mullite and cordierite. The silicon carbide porous body has amorphous and/or crystalline SiO.sub.2 or SiO on a surface(s) of the component (A) and/or the component (B). The silicon carbide porous body contains 6% by mass or less of -cristobalite in the amorphous and/or crystalline SiO.sub.2 or SiO.

A silicon carbide porous body includes: (A) silicon carbide particles as an aggregate; and (B) at least one selected from the group consisting of metallic silicon, alumina, silica, mullite and cordierite. The silicon carbide porous body has amorphous and/or crystalline SiO.sub.2 or SiO on a surface(s) of the component (A) and/or the component (B). The silicon carbide porous body contains 6% by mass or less of -cristobalite in the amorphous and/or crystalline SiO.sub.2 or SiO.

The present disclosure provides a process for producing trifluoroiodomethane, the process comprising providing a reactant stream comprising hydrogen iodide and at least one trifluoroacetyl halide selected from the group consisting of trifluoroacetyl chloride, trifluoroacetyl fluoride, trifluoroacetyl bromide, and combinations thereof, reacting the reactant stream in the presence of a first catalyst at a first reaction temperature from about 25 C. to about 400 C. to produce an intermediate product stream comprising trifluoroacetyl iodide, and reacting the intermediate product stream in the presence of a second catalyst at a second reaction temperature from about 200 C. to about 600 C. to produce a final product stream comprising the trifluoroiodomethane.

The present disclosure provides a process for producing trifluoroiodomethane, the process comprising providing a reactant stream comprising hydrogen iodide and at least one trifluoroacetyl halide selected from the group consisting of trifluoroacetyl chloride, trifluoroacetyl fluoride, trifluoroacetyl bromide, and combinations thereof, reacting the reactant stream in the presence of a first catalyst at a first reaction temperature from about 25 C. to about 400 C. to produce an intermediate product stream comprising trifluoroacetyl iodide, and reacting the intermediate product stream in the presence of a second catalyst at a second reaction temperature from about 200 C. to about 600 C. to produce a final product stream comprising the trifluoroiodomethane.

A silicon carbide porous body contains -SiC particles, Si particles, and metal silicide particles. The maximum particle diameter of the -SIC particles is not smaller than 15 m. The content of the Si particles is not lower than 10 mass %. The maximum particle diameter of the Si particles is not larger than 40 m. Further, an oxide coating film having a thickness not smaller than 0.01 m and not larger than 5 m is provided on surfaces of the Si particles.

A silicon carbide porous body contains -SiC particles, Si particles, and metal silicide particles. The maximum particle diameter of the -SIC particles is not smaller than 15 m. The content of the Si particles is not lower than 10 mass %. The maximum particle diameter of the Si particles is not larger than 40 m. Further, an oxide coating film having a thickness not smaller than 0.01 m and not larger than 5 m is provided on surfaces of the Si particles.

This application discloses a silicon carbide (SiC)-loaded graphene photocatalyst for hydrogen production under visible light irradiation and a preparation method thereof. Pure SiC and pure black carbon are respectively prepared and mixed to obtain a mixture with a resistance less than 100?. Then the mixture was vacuumized and processed with a current pulse with an increasing voltage until a breakdown occurs, and subjected to ultrasonic stirring, centrifugal washing and vacuum drying in turn to obtain the SiC-loaded graphene photocatalyst. By means of the current pulse, a heterojunction is formed between SiC and graphene to improve the catalytic activity of the photocatalyst; and the photocatalytic hydrogen production rate of SiC nanoparticles can be enhanced after loaded on the graphene.

This application discloses a silicon carbide (SiC)-loaded graphene photocatalyst for hydrogen production under visible light irradiation and a preparation method thereof. Pure SiC and pure black carbon are respectively prepared and mixed to obtain a mixture with a resistance less than 100?. Then the mixture was vacuumized and processed with a current pulse with an increasing voltage until a breakdown occurs, and subjected to ultrasonic stirring, centrifugal washing and vacuum drying in turn to obtain the SiC-loaded graphene photocatalyst. By means of the current pulse, a heterojunction is formed between SiC and graphene to improve the catalytic activity of the photocatalyst; and the photocatalytic hydrogen production rate of SiC nanoparticles can be enhanced after loaded on the graphene.

A (methyl)acrolein oxidation catalyst and a preparation method therefor-in which the catalyst has a composition represented by the following formula: x(Mo12PaCsbVcDeOf)+tC/yZ in which Mo.sub.12P.sub.aC.sub.SbV.sub.cD.sub.eO.sub.f is a heteropolyacid salt main catalyst; C is a nano carbon fiber additive, and Z is a carrier thermal conduction diluent; Mo, P, Cs, V, and O represent the elements of molybdenum, phosphorus, cesium, vanadium, and oxygen, respectively; D represents at least one element selected from the group consisting of copper, iron, magnesium, manganese, antimony, zinc, tungsten, silicon, nickel, and palladium; a, b, c, e, and f represent the atomic ratio of each element, a=0.1-3, b=0.01-3, c=0.01-5, e=0.01-2, and f being the atomic ratio of oxygen required to satisfy the valence of each of the described components; x and y represent the weights of the main catalyst and the carrier thermal conduction diluent Z, and y/x=11.1-50%; and t represents the weight of the nano carbon fiber, and t/x=3-10%.

A catalyst device includes a central axis and a catalyst support. The catalyst support includes a slit that is arranged to be orthogonal to the central axis. The slit is arranged to be symmetrical with respect to an arbitrary plane that includes the central axis.