Embodiments relate to polycrystalline diamond compacts (PDCs) including a polycrystalline diamond (PCD) table having a diamond grain size distribution selected for improving performance and/or leachability. In an embodiment, a PDC includes a PCD table bonded to a substrate. The PCD table includes a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween. Other embodiments are directed to methods of forming PDCs, and various applications for such PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.

A superabrasive compact and a method of making the superabrasive compact are disclosed. A method of making a superabrasive compact comprises steps of providing a plurality of superabrasive particles having a particle size distribution with a first ratio (d50)/(d50 principle particles) ranging from about 0.86 to about 0.92; providing a support to the plurality of superabrasive particles; and subjecting the support and the plurality of superabrasive particles to conditions of an elevated temperature and pressure suitable for producing the polycrystalline superabrasive compact.

A polycrystalline superhard construction comprises a body of polycrystalline superhard material, and a substrate of hard material bonded thereto along an interface. The body of polycrystalline superhard material comprises a first region abutting the substrate along the interface and a second region bonded to the first region. The second region defines a rake face, a cutting edge, a chamfer and at least a part of a flank face, the cutting edge being defined by an edge of the flank face joined to the chamfer, the chamfer extending between the cutting edge and the rake face. The height of the chamfer in a plane parallel to the plane through which the longitudinal axis of the polycrystalline superhard construction extends is less than the thickness of the second region. The first region comprises a material having coarser grains than the second region. There is also disclosed a method of making the same.

A high-pressure high-temperature, HPHT, diamond tool piece and a method of producing an HPHT diamond tool piece. At least a portion of the HPHT diamond tool piece comprises an aggregated nitrogen centre to C-nitrogen centre ratio of greater than 30%. The method includes irradiating an HPHTdiamond material to introduce vacancies in the diamond crystal lattice, annealing the HPHT diamond material such that at least a portion of the HPHT diamond material comprises an aggregated nitrogen centre to C-nitrogen centre ratio of greater than 30%,andprocessing the HPHT diamond material to form an HPHT diamond tool piece.

The present invention relates to the field of materials, in particular to a method for preparing a high-pressure state material that can be detached from a high-pressure device. The method comprising: placing a carbon material and a target material into a high-pressure device, and subjecting the resultant to high-temperature and high-pressure treatment to obtain a diamond high-pressure chamber containing a high-pressure state material inside. The present invention enables the high-pressure state material (including the substance and its pressure state) to be preserved inside the diamond high-pressure chamber by mixing the carbon material and the target material and placing into the sample chamber of a conventional high-pressure device, and then transforming the carbon material into diamond using the high-temperature and high-pressure treatment. The diamond high-pressure chamber can be separated from the conventional high-pressure device and maintain the high-pressure state inside, thus allowing the high-pressure material to be studied and applied in an atmospheric pressure environment.

A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm.sup.?1 to 1333 cm.sup.?1 in a Raman spectrum has a half-width of 2.0 cm.sup.?1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm.sup.2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a .sup.13C content of less than 0.01% based on the number of atoms.

The present disclosure relates to cutting elements incorporating polycrystalline diamond bodies used for subterranean drilling applications, and more particularly, to polycrystalline diamond bodies having a high diamond content which are configured to provide improved properties of thermal stability and wear resistance, while maintaining a desired degree of impact resistance, when compared to prior polycrystalline diamond bodies. In various embodiments disclosed herein, a cutting element with high diamond content includes a modified PCD structure and/or a modified interface (between the PCD body and a substrate), to provide superior performance.

An assembly for High Pressure High Temperature (HPHT) synthesis of a superhard material. The assembly comprises a container comprising a first metal. A closure also comprising the first metal is sealed to the container using a sealant material. The sealant material comprises a second metal, the seal comprising a composition of the first and second metals formable below the melting point of the second metal. The container contains superhard material.

A polycrystalline compact includes diamond, cubic boron nitride, and at least one hard material, which may be aluminum nitride, gallium nitride, silicon nitride, titanium nitride, silicon carbide, titanium carbide, titanium boride, titanium diboride, and/or aluminum boride. The diamond, the cubic boron nitride, and the hard material are intermixed and interbonded to form a polycrystalline material. An earth-boring tool includes a bit body and a polycrystalline diamond compact secured to the bit body. Methods of fabricating polycrystalline compacts include forming a mixture comprising diamond, non-cubic boron nitride, and a metal or semimetal; encapsulating the mixture in a container; and subjecting the encapsulated mixture to high-pressure and high-temperature conditions to form a polycrystalline material.

Embodiments relate to polycrystalline diamond compacts (PDCs) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (PCD) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (HPHT) process. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached PCD table. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process effective to at least partially infiltrate the at least partially leached PCD table with a cobalt-based alloy infiltrant having a composition at or near a eutectic composition of the cobalt-based alloy infiltrant.