Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

A SAPO-11 molecular sieve, preparation method thereof and use thereof in the isomerization of hydrocarbons is disclosed. The preparation method includes dissolving an aluminum source in ethylene glycol, and stirring to give a solution A; adding a structure-directing agent and a phosphorus source to the solution A, and stirring to give a solution B; adding a silicon source to the solution B, and stirring to give a solution C; transferring the solution C to a supercritical CO2 reactor, and introducing CO2 into the reactor to increase the pressure in the reactor; heating the supercritical CO2 reactor to the reaction temperature for crystallization; and after crystallization, lowering the temperature of the supercritical CO2 reactor, removing the solution from the reactor, separating the product, drying and calcining to obtain the SAPO-11 molecular sieve. A hydrocarbon isomerization catalyst can be obtained by molding the molecular sieve, loading a metal component, drying and calcining.

A polycrystalline diamond structure comprises a first region and a second region adjacent the first region, the second region being bonded to the first region by intergrowth of diamond grains. The first region comprises a plurality of alternating strata or layers, each or one or more strata or layers in the first region having a thickness in the range of around 5 to 300 microns. The polycrystalline diamond (PCD) structure has a diamond content of at most about 95 percent of the volume of the PCD material, a binder content of at least about 5 percent of the volume of the PCD material, and one or more of the layers or strata in the first region comprise and/or the second region comprises diamond grains having a mean diamond grain contiguity of greater than about 60 percent and a standard deviation of less than about 2.2 percent. There is also disclosed a method of making such a polycrystalline diamond structure.

A method of providing well-shaped diamond grains of at most about 100 microns in size. The method includes providing a synthesis assembly comprising a source of carbon material, a plurality of seed grains on which diamond material can crystallize, and solvent-catalyst material for promoting the crystallization of the diamond grains, and subjecting the synthesis assembly to a condition for growing the diamond grains. The synthesis condition is maintained long enough for at least about half of the carbon material to be converted into the diamond grains.

A capsule assembly for an ultra-high pressure furnace, comprising a containment tube having an interior side surface and defining a central longitudinal axis; a chamber suitable for accommodating a reaction assembly, a proximate and a distal end heater assembly, and a side heater assembly. When assembled, the chamber is contained within the containment tube and arranged longitudinally between the proximate and distal end heater assemblies. The side heater assembly is disposed adjacent the interior side surface and electrically connects the end heater assemblies with each other. Each end heater assembly has a respective peripheral side disposed adjacent the interior side surface Heat is produced in the chamber in response to an electric current flowing through the end and side heater assemblies. At least a proximate side heater barrier spaces apart the side heater assembly from at least the proximate end heater assembly, adjacent its peripheral side, operative to prevent a portion of the side heater assembly from intruding between the peripheral side of the proximate end heater assembly and the containment tube and short-circuiting at least part of the proximate end heater assembly, when the end heater assemblies move towards each other in response to a force applied by the ultra-high pressure furnace onto the capsule assembly along the central longitudinal axis.

Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

A capsule assembly for an ultra-high pressure furnace, comprising a containment tube defining a central longitudinal axis, a chamber suitable for accommodating a reaction assembly, a proximate and a distal end heater assembly, and a side heater assembly. When assembled, the chamber and the side heater assembly are contained within the containment tube and arranged longitudinally between the proximate and distal end heater assemblies. Each end heater assembly comprises a respective conduction volume forming a respective electrical path through the end heat assembly. The side heater assembly electrically connects the respective conducting volumes to each other, and heat is produced in the chamber in response to an electric current flowing through the side heater assembly and the conducting volumes. At least the proximate end heater assembly comprises a first insulation component including an outer insulation volume. The conducting volume of at least the proximate end heater assembly includes an inner conducting volume, and the inner conducting volume is laterally spaced apart from the containment tube by the outer insulation volume.

Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.