Embodiments provide an ultrasound transducer. The ultrasound transducer may include a multi-layered membrane having a plurality of slits extending through the membrane, thereby forming a plurality of sections of the membrane at least partially separated by the slits. Each slit extends from a perimeter of the membrane to a respective end position at a predetermined distance away from a center of the membrane. The plurality of sections of the membrane are connected to each other at the center of the membrane.

An array of micromachined ultrasonic transducers (MUTs). The array has first and second rows, the MUTs in the first row being equally spaced by a horizontal pitch in a horizontal direction, the MUTs in the second row being equally spaced by the horizontal pitch in the horizontal direction. The MUTs in the second row are shifted along the horizontal direction by a first horizontal distance relative to the MUTs in the first row and shifted along a vertical direction by a first vertical distance relative to the MUTs in the first row. The first horizontal distance is greater than zero and less than the horizontal pitch. The first vertical distance ranges from one tenth of a horizontal width of a MUT to a half of a vertical height of a MUT.

Bending mode transducers are provided including a substrate made of a high density material, the substrate having a first surface and a second surface, opposite the first surface. A piezoelectric layer is provided on the first surface of the substrate and at least one patterned electrode is provided on the piezoelectric layer. A mounting block is on the at least one patterned electrode at least one electrical contact point is provided on the first surface of the substrate remote from the at least one patterned electrode. Related devices and methods are also provided.

An acoustic transducer (30), comprising: a support structure (36); an active assembly comprising a base plate (32) supported by the support structure (36) and a piezoelectric body (34) supported by the base plate (32); and a passive vibrator (38) supported by the support structure (36) and coupled via the support structure (36) to the active assembly (32, 34) so that vibration of the active assembly (32, 34) drives the passive vibrator (38). The active assembly (32, 34) and the passive vibrator (38) have the same resonant frequency.

A vibration device includes a light transmissive body, a first cylindrical body, a plate-shaped spring portion, a second cylindrical body, and a vibrating body. The light transmissive body includes a main body portion on an inner side of a portion supported by the first cylindrical body, and a protruding portion extending from the main body portion toward an outer circumference of the light transmissive body and protruding outward more than a portion supported by the first cylindrical body. A ratio between an equivalent mass calculated from a moment of inertia of the protruding portion and a weight of the main body portion is about 0.8 to about 1.2, and a resonant frequency of the light transmissive body is larger than a resonant frequency of the spring portion.

A vibrator, a manufacturing method thereof, a haptical sensation reproduction apparatus and a vibration waveform detection method, and relates to the technical field of display. The vibrator comprises a substrate, and a piezoelectric component and a light-emitting component located on the substrate, wherein the piezoelectric component comprises an inverse piezoelectric unit, the light-emitting component comprises a direct piezoelectric unit and a light-emitting unit, and the inverse piezoelectric unit is in contact and connected with the direct piezoelectric unit. The vibrator of this solution may be disposed in a touch-control reproduction screen, the inverse piezoelectric unit in the vibrator is driven to deform to generate vibrations, and the direct piezoelectric unit in contact and connection therewith is driven to deform to generate a current to drive the light-emitting unit to emit light.

A MEMS device includes a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in a membrane portion. The first electrode is covered with the first layer and includes a recess. The piezoelectric layer includes a through hole that passes through the piezoelectric layer between a surface of the piezoelectric layer, which is opposite to the first direction, and the recess at a position corresponding to at least a portion of the first electrode.

Piezoelectric assembly, which comprises a substrate of Ni, Cu, or steel, a first oriented layer assembled on the substrate and a piezoelectric layer on the oriented layer. The piezoelectric layer has a degree of (100) orientation with respect to the local surface normal of 90% or more.

A micromachined ultrasonic transducer (MUT) which comprises a first piezoelectric layer and a second piezoelectric layer. The first piezoelectric layer is disposed between a first electrode and a second electrode. The second piezoelectric layer is disposed between the second electrode and a third electrode. At least the first electrode has first and second ends along a first axis, one or more of which is defined by a radius of curvature R. A second axis normal to the first passes through a midpoint of the first axis. A half-width of the first electrode is defined by a length L measured from the midpoint, in the direction of the second axis, to an outer perimeter of the first electrode. A total width of the first electrode at its narrowest point along the first axis is at most 2L such that the first electrode has a concave shape. R/L, is greater than 1.

Micromachined pressure transducer including: a fixed body of semiconductor material, which laterally delimits a main cavity; a transduction structure, which is suspended on the main cavity and includes at least a pair of deformable structures and a movable region, which is formed by semiconductor material and is mechanically coupled to the fixed body through the deformable structures. Each deformable structure includes: a support structure of semiconductor material, which includes a first and a second beam, each of which has ends fixed respectively to the fixed body and to the movable region, the first beam being superimposed, at a distance, on the second beam; and at least one piezoelectric transduction structure, mechanically coupled to the first beam. The piezoelectric transduction structures are electrically controllable so that they cause corresponding deformations of the respective support structures and a consequent translation of the movable region along a translation direction.