A composite member includes a substrate composed of a composite material containing a metal and a non-metal. One surface of the substrate has spherical warpage of which radius of curvature R is not smaller than 5000 mm and not greater than 35000 mm. A sphericity error is not greater than 10.0 μm, the sphericity error being defined as an average distance between a plurality of measurement points on a contour of a warped portion of the substrate and approximate arcs defined by the plurality of measurement points. The substrate has a thermal conductivity not lower than 150 W/m.Math.K and a coefficient of linear expansion not greater than 10 ppm/K.

A composite member includes a substrate composed of a composite material containing a metal and a non-metal. One surface of the substrate has spherical warpage of which radius of curvature R is not smaller than 5000 mm and not greater than 35000 mm. A sphericity error is not greater than 10.0 μm, the sphericity error being defined as an average distance between a plurality of measurement points on a contour of a warped portion of the substrate and approximate arcs defined by the plurality of measurement points. The substrate has a thermal conductivity not lower than 150 W/m.Math.K and a coefficient of linear expansion not greater than 10 ppm/K.

An open-pored metal body, which is formed having a core layer (A) consisting of Ni, Co, Fe, Cu, Ag or an alloy formed having one of said chemical elements, wherein one of said chemical elements is present in the alloy at more than 25 at %, and a gradated layer (B) is formed on surfaces of the core layer (A), said gradated layer being formed by intermetallic phase or mixed crystals of Al, and a layer (C), which is formed having aluminum oxide, is formed on the gradated layer (B).

A method for preparing a semiconducting thin film and device for carrying out the method, wherein the method includes: (1) providing a liquid-liquid interface; (2) providing at least one layered semiconductor material or its precursor(s) in the form of particles in a solvent in the form of a dispersion; (3) injecting the dispersion at the liquid-liquid interface, in order to obtain an assembly of semiconductor/semiconductor precursor particles; (4) bringing the assembly of into contact with a flexible substrate; and (5) applying a surface pressure to the dispersion to obtain a particle film of semiconductor/semiconductor precursor on the substrate, wherein the first solvent has a higher density than the second solvent.

This disclosure provides a graded composition including at least a first, second, and third material property zone each having a crystallographic configuration distinct from other zones. In some implementations, the graded composition has a first material in the first material property zone including a metal, the first material composed of metallic bonds between metal atoms present in the first material property zone; a second material that at least partially overlaps the first material in the first material property zone including carbon, the second material composed of covalent bonds between the carbon in the second material and the metal in the first material; and, a third material that at least partially overlaps the second material property zone including carbon, the third material composed of covalent bonds between the carbon of the third material. Each crystallographic configuration may include a cubic crystallographic lattice, a hexagonal lattice, a face or body-centered cubic lattice.

This disclosure provides a graded composition including at least a first, second, and third material property zone each having a crystallographic configuration distinct from other zones. In some implementations, the graded composition has a first material in the first material property zone including a metal, the first material composed of metallic bonds between metal atoms present in the first material property zone; a second material that at least partially overlaps the first material in the first material property zone including carbon, the second material composed of covalent bonds between the carbon in the second material and the metal in the first material; and, a third material that at least partially overlaps the second material property zone including carbon, the third material composed of covalent bonds between the carbon of the third material. Each crystallographic configuration may include a cubic crystallographic lattice, a hexagonal lattice, a face or body-centered cubic lattice.

A method of forming a composite component having a brass or bronze powder metal portion sinter fit into a supporting, ferrous portion.

A method and apparatus for resistive heating usable in composite-based additive manufacturing is disclosed. The method includes providing a prepared stack of substrate sheets, placing the stack between electrode assemblies of a compression device, applying a current to thereby heat the stack to a final temperature to liquefy applied powder, compressing the stack to a final height, cooling the stack, and removing the cooled, compressed stack from the compression device. The apparatus comprises at least two plates, a power supply for providing current, a first electrode assembly and a second electrode assembly.

Some variations provide a process for additive manufacturing of a nanofunctionalized metal alloy, comprising: providing a nanofunctionalized metal precursor containing metals and grain-refining nanoparticles; exposing a first amount of the nanofunctionalized metal precursor to an energy source for melting the precursor, thereby generating a first melt layer; solidifying the first melt layer, thereby generating a first solid layer; and repeating many times to generate a plurality of solid layers in an additive-manufacturing build direction. The additively manufactured, nanofunctionalized metal alloy has a microstructure with equiaxed grains. Other variations provide an additively manufactured, nanofunctionalized metal alloy comprising metals selected from aluminum, iron, nickel, copper, titanium, magnesium, zinc, silicon, lithium, silver, chromium, manganese, vanadium, bismuth, gallium, or lead; and grain-refining nanoparticles selected from zirconium, tantalum, niobium, titanium, or oxides, nitrides, hydrides, carbides, or borides thereof, wherein the additively manufactured, nanofunctionalized metal alloy has a microstructure with equiaxed grains.

A method of direct printing or writing of a metallic material involves depositing, with a printing device or writing device, an ink comprising of at least undercooled liquid metallic particles dispersed in a carrier fluid. The ink is deposited on any substrate surface to deposit the undercooled liquid metal particles thereon as one or more layers that can form a desired pattern or layered structure.