A method for manufacturing an integrally formed bladed disk of a turbomachine, includes manufacturing a plurality of blades, the blades including a root and a profiled portion; and spark plasma sintering the blades with a metal powder, the blades being angularly distributed over a contour of an annular spark plasma sintering mold, the root of the blades being embedded into the metal powder, the profiled portion of the blades protruding from the metal powder radially outwardly.

A metal paste, comprising (A) 65 to 85 wt % of metal particles and (B) 10 to 35 wt % of organic solvent, wherein the metal particles (A) consist 70 to 100 wt % of organically coated copper flakes having a specific surface area in the range of 1.9 to 3.7 m.sup.2/g, a total oxygen content in the range of 2 to 4 wt % and a weight ratio of total carbon to total oxygen in the range of 0.25 to 0.9.

A method for producing an additively manufactured, graded composite transition joint (AM-GCTJ) includes preparing a grating or lattice pattern from a first alloy A; the grating or lattice pattern includes pores in the grating or lattice patterns. The grating pattern is built from a first end to a second end being denser on the first end than on second end, and gradually reduces density by increasing the pore size and/or reducing density of the grating or lattice pattern; adding a second alloy B powder to the second end of grating or lattice pattern. The second alloy B powder is filled towards the first end. A composite is formed of first alloy A and second alloy B powder in the AM-GCTJ. The composite is subjected to hot isotropic pressing (HIP) to densify the composite. The second alloy B is graduated from the first end to the second end O of AM-GCTJ.

A solder material may include nickel and tin. The nickel may include first and second amounts of particles. A sum of the particle amounts is a total amount of nickel or less. The first amount is between 5 at % and 60 at % of the total amount of nickel. The second amount is between 10 at % and 95 at % of the total amount of nickel. The particles of the first amount have a first size distribution, the particles of the second amount have a second size distribution, 30% to 70% of the first amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the first size distribution, and 30% to 70% of the second amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the second size distribution.

The invention relates to a method of manufacturing an object (24) by joining a first component (25) and a second component (26). The first component comprises metal powder with a first alloy composition and a first soluble binder, and the second component comprises metal powder with a second alloy composition and a second soluble binder. They may further comprise ceramic powder. At least one of the surfaces to be joined is dissolved before they are brought in contact, or a mixture of metal powder with a third alloy composition and a dissolved third binder is arranged there between. The chemical differences between the first, second, and third alloy compositions are within predetermined limits. The components are sintered or oxidized together whereby it is possible to obtain an object wherein the transitions between the material phases from the joined components are close to inconspicuous when analysed with scanning electron microscopy.

The invention relates to a method of manufacturing an object (24) by joining a first component (25) and a second component (26). The first component comprises metal powder with a first alloy composition and a first soluble binder, and the second component comprises metal powder with a second alloy composition and a second soluble binder. They may further comprise ceramic powder. At least one of the surfaces to be joined is dissolved before they are brought in contact, or a mixture of metal powder with a third alloy composition and a dissolved third binder is arranged there between. The chemical differences between the first, second, and third alloy compositions are within predetermined limits. The components are sintered or oxidized together whereby it is possible to obtain an object wherein the transitions between the material phases from the joined components are close to inconspicuous when analysed with scanning electron microscopy.

A sputtering target-backing plate assembly obtained by bonding a sputtering target and a backing plate using a brazing material, wherein a braze bonding layer which bonds the sputtering target and the backing plate contains a material having thermal conductivity that is higher than that of the brazing material in an amount of 5 vol % or more and 50 vol % or less, and a thickness of the braze bonding layer is 100 μm or more and 700 μm or less. An object is to prevent the seepage of the brazing material while maintaining the thickness of the braze bonding layer.

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 μm and less than or equal to 0.8 μm, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 μm and less than or equal to 50 μm, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Discussed is a paste composition for an electrode of a solar cell, the paste including a conductive powder, an organic vehicle, and an inorganic composition formed by including a plurality of metal compounds including a gallium compound including gallium as a component of a main network former of the inorganic composition.

A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.