B23K20/026

Method for joining aluminum material
11865610 · 2024-01-09 · ·

A method for joining an aluminum material includes, in the following order, arranging a first wrought aluminum alloy material along a first jig in an internal space defined between the first jig and a second jig that is arranged to face the first jig and has a pouring port, pouring molten aluminum toward the first wrought aluminum alloy material through the pouring port under pressure to cause the molten aluminum to collide with a surface of the first wrought aluminum alloy material, thereby digging down the first wrought aluminum alloy material at a collision position between the molten aluminum and the first wrought aluminum alloy material, and flowing the molten aluminum together with a fraction of the first wrought aluminum alloy material removed by digging within the internal space along a surface of the first wrought aluminum alloy material around the collision position.

Bonding material and bonding method using same

There is provided an inexpensive bonding material, which can be easily printed on articles to be bonded to each other and which can suppress the generation of voids in the bonded portions of the articles to be bonded to each other, and a bonding method using the same. In a bonding material of a copper paste which contains a copper powder containing 0.3% by weight or less of carbon and having an average particle diameter of 0.1 to 1 m, and an alcohol solvent, such as a monoalcohol, a diol, a triol or a terpene alcohol, the content of the copper powder is in the range of from 80% by weight to 95% by weight, and the content of the alcohol solvent is in the range of from 5% by weight to 20% by weight.

Joint manufacturing method

Provided is a joint manufacturing method including: a step A of preparing a laminate in which two objects to be joined are temporarily adhered with a heat-joining sheet including a pre-sintering layer interposed between the two objects to be joined; a step B of increasing a temperature of the laminate from a temperature equal to or lower than a first temperature defined below to a second temperature; and a step C of holding the temperature of the laminate in a predetermined range after the step B, in which the laminate is pressurized during at least a part of the step B and at least a part of the step C. The first temperature is a temperature at which an organic component contained in the pre-sintering layer is decreased by 10% by weight when the pre-sintering layer is subjected to thermogravimetric measurement.

BONDED BODY AND INSULATING CIRCUIT SUBSTRATE
20200321264 · 2020-10-08 ·

A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.

HYDROGEN PURIFICATION DEVICES

Hydrogen purification devices and their components are disclosed. In some embodiments, the devices may include at least one foil-microscreen assembly disposed between and secured to first and second end frames. The at least one foil-microscreen assembly may include at least one hydrogen-selective membrane and at least one microscreen structure including a non-porous planar sheet having a plurality of apertures forming a plurality of fluid passages. The planar sheet may include generally opposed planar surfaces configured to provide support to the permeate side. The plurality of fluid passages may extend between the opposed surfaces. The at least one hydrogen-selective membrane may be metallurgically bonded to the at least one microscreen structure. In some embodiments, the devices may include a permeate frame having at least one membrane support structure that spans at least a substantial portion of an open region and that is configured to support at least one foil-microscreen assembly.

Nuclear reactor fuel rod and fuel assembly having bundled same

A nuclear reactor fuel rod is a fuel rod for a light-water reactor. The nuclear reactor fuel rod includes a fuel cladding tube and an end plug, both of which are formed of a silicon carbide material. A bonding portion between the fuel cladding tube and the end plug is formed by brazing with a predetermined metal bonding material interposed, and/or by diffusion bonding. The predetermined metal bonding material has a solidus temperature of 1200 C. or higher. An outer surface of the bonding portion, and a portion of an outer surface of the fuel cladding tube and the end plug, which is adjacent to the outer surface of the bonding portion are covered by bonding-portion coating formed of a predetermined coating metal. The predetermined metal bonding material and the predetermined coating metal have an average linear expansion coefficient which is less than 10 ppm/K.

Method of forming a leadless stack comprising multiple components

A method of forming a leadless stack comprising multiple components is provided. The method comprises forming an MLCC comprising a first capacitor external termination and a second capacitor external termination and forming an electronic element is formed comprising a first element external termination and a second element external termination. The MLCC and electronic component are are arranged in a stack with a TLPS bond between the first capacitor external termination and the first element external termination.

METHOD OF FORMING A DIFFUSION BONDED JOINT
20200290314 · 2020-09-17 · ·

A method of forming a diffusion bonded joint comprises the steps of: providing a first component having a first faying surface; providing a second component having a second faying surface; applying a lamellar coating to at least one of the first faying surface and the second faying surface; and bringing the first and second faying surfaces into contact in a diffusion bonding operation to form the diffusion bonded joint.

SEMICONDUCTOR ELEMENT BONDING BODY, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT BONDING BODY

A semiconductor element bonding body including: a substrate, in which a concave portion is formed; and a semiconductor element placed in the concave portion to be mounted to the substrate. A portion of the substrate in which the concave portion is formed is made of Cu. The concave portion has a perimeter portion in which a level difference is formed, and the level difference has a height d of 20 m or more and less than 50 m. The concave portion has a bottom surface having a flatness degree of /8.7 m or more and /1.2 m or less when a wavelength of a laser is 632.8 nm. A metal film is formed on the semiconductor element, and the bottom surface of the concave portion and the metal film are bonded directly to each other.

Joined body, method for producing joined body, and projector

A joined body includes a first substrate, a second substrate which faces the first substrate, and a joining film which joins the first substrate to the second substrate, wherein the joining film has a first region and a second region, and in a plan view of the first substrate, the first region has a higher metal nanoparticle density than the second region.