Systems and methods for static and dynamic calibration may be used to provide alignment of a measurement beam from a coherence imaging (CI) measurement system relative to a processing beam from a material processing system. In these systems and methods, a calibration measurement output may be obtained from the CI measurement system and/or from an auxiliary sensor. Future measurements performed by the CI measurement system may be modified based on, at least in part, the calibration measurement output.

According to an example, an apparatus may include a heating lamp to illuminate and heat an area of a layer of build materials, in which the build materials may be one of a metallic and a plastic powder. The apparatus may also include a laser source to generate a laser beam and a controller to control the heating lamp to heat the build materials in the area of the layer of build materials to a temperature that is between about 100° C. to about 400° C. below a temperature at which the build materials begin to melt and to control the laser source to output a laser beam to melt the build materials in a portion of the heated area of the layer of build materials.

According to an example, an apparatus may include a heating lamp to illuminate and heat an area of a layer of build materials, in which the build materials may be one of a metallic and a plastic powder. The apparatus may also include a laser source to generate a laser beam and a controller to control the heating lamp to heat the build materials in the area of the layer of build materials to a temperature that is between about 100° C. to about 400° C. below a temperature at which the build materials begin to melt and to control the laser source to output a laser beam to melt the build materials in a portion of the heated area of the layer of build materials.

A method of processing by controlling one or more beam characteristics of an optical beam may include: launching the optical beam into a first length of fiber having a first refractive-index profile (RIP); coupling the optical beam from the first length of fiber into a second length of fiber having a second RIP and one or more confinement regions; modifying the one or more beam characteristics of the optical beam in the first length of fiber, in the second length of fiber, or in the first and second lengths of fiber; confining the modified one or more beam characteristics of the optical beam within the one or more confinement regions of the second length of fiber; and/or generating an output beam, having the modified one or more beam characteristics of the optical beam, from the second length of fiber. The first RIP may differ from the second RIP.

A method of processing by controlling one or more beam characteristics of an optical beam may include: launching the optical beam into a first length of fiber having a first refractive-index profile (RIP); coupling the optical beam from the first length of fiber into a second length of fiber having a second RIP and one or more confinement regions; modifying the one or more beam characteristics of the optical beam in the first length of fiber, in the second length of fiber, or in the first and second lengths of fiber; confining the modified one or more beam characteristics of the optical beam within the one or more confinement regions of the second length of fiber; and/or generating an output beam, having the modified one or more beam characteristics of the optical beam, from the second length of fiber. The first RIP may differ from the second RIP.

Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 μm, a second diameter at the second surface wherein the first diameter is less than or equal to 100 μm, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 μm, a second diameter at the second surface wherein the first diameter is less than or equal to 100 μm, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

There is provided a laser processing device that includes a laser light source configured to output laser light, a spatial light modulator configured to modulate the laser light output from the laser light source according to a phase pattern and emit the modulated laser light, an objective lens configured to converge the laser light emitted from the spatial light modulator onto an object, a controller configured to control a phase pattern to be displayed on the spatial light modulator, and a determiner configured to determine whether operation of the spatial light modulator is normal, in which the controller performs switching control in which the phase pattern to be displayed on the spatial light modulator is switched, and the determiner makes the determination on the basis of a change in intensity of the laser light emitted from the spatial light modulator between before the switching control and after the switching control.

A laser machining device which condenses a laser light inside a wafer and forms modified regions in a plurality of layers in the wafer, includes an infrared imaging optical system configured to face one surface of the wafer. In a case where a modified region positioned on a side of another surface opposite to the one surface of the wafer is defined as a first modified region and another modified region is defined as a second modified region, among the modified regions in the plurality of layers, the infrared imaging optical system has a focusing range that includes the first modified region and the another surface, and simultaneously images the first modified region and the another surface, and the second modified region is positioned outside the focusing range.

Deep learning is performed by using a material of a processing object, a laser beam parameter showing a property of laser beam which the processing object is irradiated with, and pre-processed part data and post-processed part data that respectively reflect laser processing-involved three-dimensional shapes of a processed part before and after irradiation of the processing object with the laser beam. A first relationship of input data that are the material of the processing object, the pre-processed part data, and the laser beam parameter to output data that is the post-processed part data after irradiation with the laser beam in relation to the input data is accordingly obtained as one learning result.