A system and method may be used to visualize laser energy distributions within one or more laser movements generated by a scanning laser processing head. The system and method determine laser energy distributions at a plurality of locations within the laser movement(s) based at least in part on received laser processing parameters and laser movement parameters. A visual representation of the laser energy distributions may then be displayed to allow the user to visualize and select or define the appropriate pattern and parameters for a laser processing operation. The visualization system and method may be used to predict actual laser energy distributions in a laser processing operation by visualizing the laser energy distributions before the laser processing operation and/or to troubleshoot a laser processing operation by visualizing the laser energy distributions after the laser processing operation.

A system and method of planarizing a layer are disclosed. Topography of the layer is measured to produce a topographic map, which is then digitized into blocks of that indicate different thickness variation. Laser conditions are assigned for each block, a laser steered to planarization blocks where material is to be removed, and the material ablated at each planarization block. In-situ monitoring of the surface profile provides feedback to adjust the laser conditions during planarization. When depth control is used, the laser is focused at a focal plane and has a focal depth beyond which no material is ablated and the laser is steered across the entire layer. A thin metal layer of higher ablation threshold than the dielectric layer formed over the layer provides added selectivity, with the laser conditions changed after ablation of the metal layer. Otherwise, planarization is limited to the planarization blocks.

A method (and structure) includes performing an initial partial anneal of a metal interconnect overburden layer for semiconductor devices being fabricated on a chip on a semiconductor wafer. Orientation of an early recrystallizing grain at a specific location on a top surface of the metal overburden layer is determined, as implemented and controlled by a processor on a computer. A determination is made whether the orientation of the early recrystallizing grain is desirable or undesirable.

A method (and structure) includes performing an initial partial anneal of a metal interconnect overburden layer for semiconductor devices being fabricated on a chip on a semiconductor wafer. Orientation of an early recrystallizing grain at a specific location on a top surface of the metal overburden layer is determined, as implemented and controlled by a processor on a computer. A determination is made whether the orientation of the early recrystallizing grain is desirable or undesirable.

A laser processing system capable of appropriately adjusting a timing to switch a laser output command with respect to the movement of an axis, and improving synchronization accuracy between the movement of the axis and a cutting position. A block remaining time of a block in execution is compared to a predetermined switching time. When the block remaining time is equal to or larger than the switching time, a laser output command of the current block is continued. On the other hand, when the block remaining time is smaller than the switching time, the laser output command to a laser oscillator is switched from the command of the current block to a command of a block subsequent to the current block.

A laser processing system capable of appropriately adjusting a timing to switch a laser output command with respect to the movement of an axis, and improving synchronization accuracy between the movement of the axis and a cutting position. A block remaining time of a block in execution is compared to a predetermined switching time. When the block remaining time is equal to or larger than the switching time, a laser output command of the current block is continued. On the other hand, when the block remaining time is smaller than the switching time, the laser output command to a laser oscillator is switched from the command of the current block to a command of a block subsequent to the current block.

There is provided a laser processing device that includes a laser light source configured to output laser light, a spatial light modulator configured to modulate the laser light output from the laser light source according to a phase pattern and emit the modulated laser light, an objective lens configured to converge the laser light emitted from the spatial light modulator onto an object, a controller configured to control a phase pattern to be displayed on the spatial light modulator, and a determiner configured to determine whether operation of the spatial light modulator is normal, in which the controller performs switching control in which the phase pattern to be displayed on the spatial light modulator is switched, and the determiner makes the determination on the basis of a change in intensity of the laser light emitted from the spatial light modulator between before the switching control and after the switching control.

A method (and structure) includes performing an initial partial anneal of a metal interconnect overburden layer for semiconductor devices being fabricated on a chip on a semiconductor wafer. Orientation of an early recrystallizing grain at a specific location on a top surface of the metal overburden layer is determined, as implemented and controlled by a processor on a computer. A determination is made whether the orientation of the early recrystallizing grain is desirable or undesirable.

A method (and structure) includes performing an initial partial anneal of a metal interconnect overburden layer for semiconductor devices being fabricated on a chip on a semiconductor wafer. Orientation of an early recrystallizing grain at a specific location on a top surface of the metal overburden layer is determined, as implemented and controlled by a processor on a computer. A determination is made whether the orientation of the early recrystallizing grain is desirable or undesirable.

A system and method may be used to monitor and/or control material processing where a process beam is moved in a wobble pattern, such as a wobble-welding process. While at least one process beam is moved according to a wobble pattern on a processing site (e.g., a weld site) of a workpiece, an ICI system moves an imaging beam at least partially independently of the process beam to one or more measurement locations on the wobble pattern and obtains ICI measurements (e.g., depth measurements) at those locations. The ICI measurement(s) may be used, for example, to evaluate keyhole and/or melt pool characteristics during a welding process. Although the present application describes wobble welding processes, the systems and methods described herein may also be used with other material processing applications where a laser or other energy beam is wobbled or dithered during processing including, without limitation, additive manufacturing, marking and material removal.