A method of processing a transparent workpiece that includes directing a laser beam combination comprising a first beam and a second beam into the transparent workpiece simultaneously, the first beam passing through an impingement surface of the transparent workpiece at a first impingement location and the second beam passing through the impingement surface at a second impingement location. The first beam forms a first laser beam focal line in the transparent workpiece and generates a first induced absorption to produce a first defect segment within the transparent workpiece, the first defect segment having a first chamfer angle and the second beam forms a second laser beam focal line in the transparent workpiece and generates a second induced absorption to produce a second defect segment within the transparent workpiece, the second defect segment having a second chamfer angle, the second chamfer angle differing from the first chamfer angle.

In one example, a system comprises a laser assisted bonding (LAB) tool. The LAB tool comprises a stage block and a first lateral laser source facing the stage block from a lateral side of the stage block. The stage block is configured to support a substrate and a first electronic component coupled with the substrate, and the first electronic component comprises a first interconnect. The first lateral laser source is configured to emit a first lateral laser beam laterally toward the stage block to induce a first heat on the first interconnect to bond the first interconnect with the substrate. Other examples and related methods are also disclosed herein.

In one example, a system comprises a laser assisted bonding (LAB) tool. The LAB tool comprises a stage block and a first lateral laser source facing the stage block from a lateral side of the stage block. The stage block is configured to support a substrate and a first electronic component coupled with the substrate, and the first electronic component comprises a first interconnect. The first lateral laser source is configured to emit a first lateral laser beam laterally toward the stage block to induce a first heat on the first interconnect to bond the first interconnect with the substrate. Other examples and related methods are also disclosed herein.

A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

An adjustment method of a laser processing apparatus includes a spatial light modulator adjustment step of adjusting a spatial light modulator into a state ready for splitting a laser beam emitted from a laser oscillator and applying a plurality of laser beams such that laser beams will have a desired positional relation, a processing mark formation step of operating the laser oscillator to apply the laser beams to a wafer such that a plurality of processing marks is formed, an imaging step of stopping the laser oscillator, and imaging the processing marks formed at the wafer, and an aberration correction step of correcting aberration of the condenser by comparing the desired positional relation and a positional relation among the imaged processing marks, and adjusting the spatial light modulator such that the positional relation among the processing marks conforms to the desired positional relation.

Provided are a variable pulse width flat-top laser device and an operation method therefor. A variable pulse width flat-top laser device includes a light source unit including first and second laser light sources driven at different times to respectively emit pulse-type first and second laser beams, a beam shaping unit configured to shape the first and second laser beams emitted from the light source unit into flat-top laser beams, a combination/split unit located between the light source unit and the beam shaping unit, and including a first beam combination/split unit configured to combine optical paths of the first and second laser beams and split a combined optical path into at least two optical paths so that the split at least two optical paths are directed to different regions of an incident surface of the beam shaping unit, and an imaging optical system configured to time-sequentially overlay the flat-top laser beams shaped by the beam shaping unit on a target object to form an image.

Provided are a variable pulse width flat-top laser device and an operation method therefor. A variable pulse width flat-top laser device includes a light source unit including first and second laser light sources driven at different times to respectively emit pulse-type first and second laser beams, a beam shaping unit configured to shape the first and second laser beams emitted from the light source unit into flat-top laser beams, a combination/split unit located between the light source unit and the beam shaping unit, and including a first beam combination/split unit configured to combine optical paths of the first and second laser beams and split a combined optical path into at least two optical paths so that the split at least two optical paths are directed to different regions of an incident surface of the beam shaping unit, and an imaging optical system configured to time-sequentially overlay the flat-top laser beams shaped by the beam shaping unit on a target object to form an image.

A heat-resistant magnetic domain refined grain-oriented silicon steel, a single-sided surface or a double-sided surface of which has several parallel grooves which are formed in a grooving manner, each groove extends in the width direction of the heat-resistant magnetic domain refined grain-oriented silicon steel, and the several parallel grooves are uniformly distributed along the rolling direction of the heat-resistant magnetic domain refined grain-oriented silicon steel. Each groove which extends in the width direction of the heat-resistant magnetic domain refined grain-oriented silicon steel is formed by splicing several sub-grooves which extend in the width direction of the heat-resistant magnetic domain refined grain-oriented silicon steel. The manufacturing method for a heat-resistant magnetic domain refined grain-oriented silicon steel comprises the step of: forming grooves on a single-sided surface or a double-sided surface of a heat-resistant magnetic domain refined grain-oriented silicon steel in a laser grooving manner, a laser beam of the laser grooving is divided into several sub-beams by a beam splitter, and the several sub-beams form the several sub-grooves which are spliced into the same groove.

A heat-resistant magnetic domain refined grain-oriented silicon steel, a single-sided surface or a double-sided surface of which has several parallel grooves which are formed in a grooving manner, each groove extends in the width direction of the heat-resistant magnetic domain refined grain-oriented silicon steel, and the several parallel grooves are uniformly distributed along the rolling direction of the heat-resistant magnetic domain refined grain-oriented silicon steel. Each groove which extends in the width direction of the heat-resistant magnetic domain refined grain-oriented silicon steel is formed by splicing several sub-grooves which extend in the width direction of the heat-resistant magnetic domain refined grain-oriented silicon steel. The manufacturing method for a heat-resistant magnetic domain refined grain-oriented silicon steel comprises the step of: forming grooves on a single-sided surface or a double-sided surface of a heat-resistant magnetic domain refined grain-oriented silicon steel in a laser grooving manner, a laser beam of the laser grooving is divided into several sub-beams by a beam splitter, and the several sub-beams form the several sub-grooves which are spliced into the same groove.