A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

A method for laser cutting a workpiece includes the steps of guiding a laser beam over the workpiece in a cutting direction so as to produce a cutting kerf with two cutting flanks and melting material on the workpiece at a cutting front that extends between the cutting flanks and adjoins at least one of the cutting flanks at an angle. The laser beam has a non-circular cross section and, at a front of the laser beam in the cutting direction, a continuous cutting beam contour corresponding to the cutting front.

In one embodiment, a surface has a laser-beam machined area including an array of micro-sized conical pillars that are arranged in orthogonal rows and columns across the surface and that extend upward, the conical pillars defining deep troughs between them that are configured to absorb electrons, electromagnetic radiation, or both, the conical pillars tapering from relatively wide bases to pointed tips, the conical pillars comprising outer surfaces that are covered with a plurality of nanoparticles.

In one embodiment, a surface has a laser-beam machined area including an array of micro-sized conical pillars that are arranged in orthogonal rows and columns across the surface and that extend upward, the conical pillars defining deep troughs between them that are configured to absorb electrons, electromagnetic radiation, or both, the conical pillars tapering from relatively wide bases to pointed tips, the conical pillars comprising outer surfaces that are covered with a plurality of nanoparticles.

A visible light laser system and operation for welding materials together. A blue laser system that forms essentially perfect welds for copper based materials. A blue laser system and operation for welding conductive elements, and in particular thin conductive elements, together for use in energy storage devices, such as battery packs.

A visible light laser system and operation for welding materials together. A blue laser system that forms essentially perfect welds for copper based materials. A blue laser system and operation for welding conductive elements, and in particular thin conductive elements, together for use in energy storage devices, such as battery packs.

A laser processing apparatus includes a laser oscillator configured to emit a laser beam, a slit configured to narrow a width of the laser beam emitted from the laser oscillator to a width corresponding to a dividing groove to form the dividing groove of a predetermined width, a slit moving mechanism configured to move the slit in a direction corresponding to a width direction of the dividing groove, and an adjusting unit configured to make the center of the slit and the cross-sectional center of the laser beam entering the slit coincide with each other in a direction in which the slit moving mechanism moves the slit.

A laser processing apparatus includes a laser oscillator configured to emit a laser beam, a slit configured to narrow a width of the laser beam emitted from the laser oscillator to a width corresponding to a dividing groove to form the dividing groove of a predetermined width, a slit moving mechanism configured to move the slit in a direction corresponding to a width direction of the dividing groove, and an adjusting unit configured to make the center of the slit and the cross-sectional center of the laser beam entering the slit coincide with each other in a direction in which the slit moving mechanism moves the slit.

A laser oscillator includes a plurality of laser modules, beam coupler (12) that couples a plurality of laser beams (LB1 to LB4) emitted from the plurality of laser modules to form a coupled laser beam, beam coupler (12) emitting the coupled laser beam, and a condensing lens unit having a condensing lens, the condensing lens unit condensing the coupled laser beam to have a given beam diameter and guiding the condensed coupled laser beam to a transmission fiber. Beam coupler (12) has optical members (OC1 to OC4) configured to change optical paths of laser beams (LB1 to LB4). By changing the optical paths of laser beams (LB1 to LB4) by optical members (OC1 to OC4,) a beam profile of the coupled laser beam emitted from the transmission fiber is changed without adjusting a position of the condensing lens.

A method of fiber laser processing of thin film deposited on a substrate includes providing a laser beam from at least one fiber laser which is guided through a beam-shaping unit onto the thin film. The beam-shaping optics is configured to shape the laser beam into a line beam which irradiates a first irradiated thin film area Ab on a surface of the thin film, with the irradiated thin film area Ab being a fraction of the thin film area Af. By continuously displacing the beam shaping optics and the film relative to one another in a first direction at a distance dy between sequential irradiations, a sequence of uniform irradiated thin film areas Ab are formed on the film surface defining thus a first elongated column. Thereafter the beam shaped optics and film are displaced relative to one another at a distance dx in a second direction transverse to the first direction with the distance dx being smaller than a length of the irradiated film area Ab. With the steps performed to form respective columns, the elongated columns overlap one another covering the desired thin film area Af. The dx and dy distances are so selected that that each location of the film area Af is exposed to the shaped laser beam during a cumulative predetermined duration.