A laser processing device includes an irradiation unit configured to irradiate an object with laser light, an image capturing part configured to capture an image of the object, and a control unit configured to control at least the irradiation unit and the image capturing part. A plurality of lines is set in the object. The control unit performs a first process of irradiating the object with the laser light for each of the plurality of lines by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object.

A three-dimensional additive manufacturing device manufactures a layered structure by supplying powder for manufacturing the layered structure while changing the positional relationship between a discharge port from which the powder is discharged and the layered structure. The three-dimensional additive manufacturing device includes: a powder supply unit that supplies powder from the discharge port toward the layered structure; a light irradiation unit that irradiates the powder with a light beam to melt and harden the powder to thereby manufacture the layered structure; an imaging unit that captures an image of the manufacturing site where the layered structure is being manufactured; a distance detector that detects a distance from the manufacturing site to the powder supply unit on the basis of the image; and a feedback controller that adjusts a moving speed of the powder supply unit relative to the layered structure on the basis of a detection result of the distance.

A control device for controlling an annealing apparatus that performs laser annealing by causing a laser beam to be incident on a surface of a semiconductor wafer and moving a beam spot of the laser beam on the surface of the semiconductor wafer, the control device making a sweep speed of the beam spot of the laser beam faster than twice a value obtained by dividing a thermal diffusivity of the semiconductor wafer by a thickness of the semiconductor wafer.

A processing apparatus includes a wafer table that supports a wafer, a frame table that supports an annular frame, a first tape pressure bonding unit that includes a first pressure bonding roller for executing pressure bonding of a tape to the annular frame, and a second tape pressure bonding unit that includes a second pressure bonding roller for executing pressure bonding of the tape of the tape-attached annular frame to a front surface or a back surface of the wafer. A first heating unit is disposed in one of or both the frame table and the first pressure bonding roller, while a second heating unit is disposed in one of or both the wafer table and the second pressure bonding roller.

Provided is a mask manufacturing method including preparing a preliminary mask sheet including a first surface and a second surface facing each other, forming a mask support part including a concave part recessed from the first surface and a protrusion part adjacent to the concave part and protruding from the first surface by irradiating a first laser light to the first surface of the preliminary mask sheet, and forming an opening part adjacent to the protrusion part and penetrating the preliminary mask sheet by irradiating a second laser light on the second surface of the preliminary mask sheet.

A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], included in crystal orientations <100> at an angle of 5° or less, thereby forming a peel-off layer that functions as separation initiating points between a part of the monocrystalline silicon wafer that belongs to the face side thereof and a part of the monocrystalline silicon wafer that belongs to the reverse side thereof.

A laser processing device includes a control unit, and the control unit executes a first process of controlling a laser irradiation unit according to a first processing condition set such that a modified region and a modified region are formed inside a wafer; a second process of identifying a state related to each of the modified regions, and of determining whether or not the first processing condition is proper; a third process of controlling the laser irradiation unit according to a second processing condition set such that the modified regions are formed and a modified region is formed between the modified regions in a thickness direction of the wafer inside the wafer; and a fourth process of identifying a state related to each of the modified regions, and of determining whether or not the second processing condition is proper.

This inspection device includes: a laser irradiation unit that irradiates a wafer having a back surface and a front surface with a laser beam from the back surface side of the wafer; an imaging unit that outputs light having permeability to the wafer and detects the light propagating through the wafer; and a control part configured to perform a first process of controlling the laser irradiation unit so that a modified region is formed inside the wafer by irradiating the wafer with the laser beam and a second process of deriving a position of the modified region on the basis of a signal output from the imaging unit that detects the light and deriving a thickness of the wafer on the basis of the derived position of the modified region and a set recipe.

There is provided a laser light irradiating device that includes a spatial light modulator configured to modulate laser light output from a laser light source according to a phase pattern and emit the modulated laser light, an objective lens configured to converge the laser light emitted from the spatial light modulator onto the object, a focusing lens arranged between the spatial light modulator and the objective lens in an optical path of the laser light and configured to focus the laser light, and a slit member arranged at a focal position on a rear side of the focusing lens in the optical path of the laser light and configured to block a part of the laser light.