Disclosed herein is a wafer producing method for producing an SiC wafer from a single crystal SiC ingot. The wafer producing method includes a separation surface forming step of forming a separation surface composed of modified layers, cracks, and connection layers inside the ingot and a wafer separating step of separating a part of the ingot along the separation surface as an interface to thereby produce the wafer. The separation surface forming step includes a modified layer forming step of forming the modified layers and the cracks extending from the modified layers along a c-plane, and a connection layer forming step of forming the connection layers each connecting the cracks formed adjacent to each other in the thickness direction of the ingot.

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

A laser processing apparatus for producing a GaN wafer from a GaN ingot includes a laser beam irradiating unit configured to apply a laser beam having a wavelength capable of passing through the GaN ingot held by a chuck table. The laser beam irradiating unit includes a laser oscillator configured to oscillate the laser beam. The laser oscillator includes a seeder configured to oscillate a high-frequency pulsed laser, a thinning-out unit configured to thin out high-frequency pulses oscillated by the seeder at a predetermined repetition frequency, and generate one burst pulse with a plurality of high-frequency pulses as sub-pulses, and an amplifier configured to amplify the generated burst pulse.

A method of making a component includes: depositing a metallic powder on a workplane; directing a beam from a directed energy source to fuse the powder in a pattern corresponding to a cross-sectional layer of the component; repeating in a cycle the steps of depositing and fusing to build up the component in a layer-by layer fashion; and during the cycle of depositing and melting, using an external heat control apparatus separate from the directed energy source to maintain a predetermined temperature profile of the component, such that the resulting component has a directionally-solidified or single-crystal microstructure.

A thermos cup vacuumizing device and method are provided. The thermos cup vacuumizing device includes a pre-vacuumizing chamber, a heating chamber, a welding chamber, and a cooling chamber. A continuous conveying device is provided at a bottom of each of the chambers. The thermos cup vacuumizing device further includes a controllable and movable laser welding device and multiple transparent windows. A laser beam of the laser welding device passes through the transparent windows to melt a welding ball at provided at a hole in the center of the bottom of the thermos cup. A vertically movable inlet valve is provided at an inlet of the pre-vacuumizing chamber, and a vertically movable outlet valve is provided at an outlet of the cooling chamber. The present disclosure realizes the continuous vacuumizing operation on the thermos cups, improves the product qualification rate and processing efficiency, and realizes automatic mass production.

In both a case where a workpiece is a regular workpiece having a first residual peeling layer on one surface thereof and a case where the workpiece is an adjustment workpiece not having the first residual peeling layer, a wafer having a predetermined thickness is manufactured by grinding opposite surfaces of the workpiece. That is, in the present invention, because the opposite surfaces of the workpiece are ground, wafers can be manufactured from two kinds of workpieces irrespective of whether or not the first residual peeling layer is present on the one surface of the workpiece. Hence, even when two kinds of workpieces are housed in a mixed manner in a first cassette, wafers having the predetermined thickness can be manufactured easily from these workpieces.

The invention describes a laser printing system (100) for illuminating an object moving relative to a laser module of the laser printing system (100) in a working plane (180), the laser module comprising at least two laser arrays of semiconductor lasers and at least one optical element, wherein the optical element is adapted to image laser light emitted by the laser arrays, such that laser light of semiconductor lasers of one laser array is imaged to one pixel in the working plane of the laser printing system, and wherein the laser printing system is a 3D printing system for additive manufacturing and wherein two, three, four or a multitude of laser modules (201, 202) are provided, which are arranged in columns (c1, c2) perpendicular to a direction of movement (250) of the object in the working plane (180), and wherein the columns are staggered with respect to each other such that a first laser module (201) of a first column of laser modules (c1) is adapted to illuminate a first area (y1) of the object and a second laser module (202) of a second column (c2) of laser modules is adapted to illuminate a second area (y2) of the object, wherein the first area (y1) is adjacent to the second area (y2) such that continuous illumination of the object is enabled.

A method of processing a plate-shaped workpiece includes a sheet affixing step of laying a thermocompression bonding sheet on a surface of the workpiece and heating and pressing the thermocompression bonding sheet against the workpiece to affix the thermocompression bonding sheet to the workpiece, a laser beam applying step of applying a laser beam having a wavelength absorbable by the workpiece to another surface of the workpiece along a projected dicing line established thereon, thereby processing the workpiece along the projected dicing line, and a sheet joining step of pressing the thermocompression bonding sheet while reheating the thermocompression bonding sheet to soften the same, so that the thermocompression bonding sheet is joined up by closing dividing grooves or through holes made in the thermocompression bonding sheet when the workpiece is processed in the laser beam applying step.

A method of forming an integrated circuit is described. The method first positions a semiconductor wafer in a processing chamber, and second, laser anneals at least a portion of the semiconductor wafer. The laser annealing includes tracing a first laser beam, in a first path having a first direction, across the at least a portion of the semiconductor wafer, tracing a second laser beam, in a second path having a second direction, opposite to and colinear with the first direction, across the at least a portion of the semiconductor wafer.

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.