Patent classifications
B23K26/3576
LASER INDUCED FRICTION SURFACE ON FIREARM
A firearm having a laser induced friction surface. A method for forming the laser induced friction surface on the firearm may includes the steps of disposing the laser machine adjacent to a component of the firearm, adjusting the laser machine, then applying the laser beam of the laser machine onto a component surface.
Laser induced friction surface on firearm
A firearm having a laser induced friction surface. A method for forming the laser induced friction surface on the firearm may includes the steps of disposing the laser machine adjacent to a component of the firearm, adjusting the laser machine, then applying the laser beam of the laser machine onto a component surface.
Workpiece Plating Treatment Method and Workpiece Manufacturing Method
A workpiece plating treatment method includes the steps of providing a pulse laser having a plurality of different energy levels, adjusting the pulse laser to the plurality of different energy levels, and scanning a plating layer of a workpiece with the pulse laser at the plurality of different energy levels to effect different changes on the plating layer. The different energy levels include an activation energy level, a temperature rise energy level, a constant temperature energy level, a melting energy level, a cooling energy level, and a polishing energy level.
SURFACE TREATMENT METHOD
A surface treatment method is for processing a surface of a substrate. The method includes irradiating a surface having unevenness with a laser beam satisfying all of the three following requirements: a power density in a range with a radius of 25 μm from a center of a laser beam spot is 1.0×103 to 1.0×105 kW/cm2; a power density of an entire laser beam spot is 0.08 to 0.12 times the power density in the range with the radius of 25 μm from the center of the laser beam spot; and an action time in the range with the radius of 25 μm from the center of the laser beam spot is 1.7×10-6 to 1.0×10-5 seconds. The method leaves a certain roughness on the surface of the substrate while removing fine and sharp protrusions on the surface.
Reducing surface asperities
Surface asperities, such as roughness characteristics, are reduced or otherwise mitigated via the control of surface regions including the asperities in different regimes. In accordance with various embodiments, the height of both high-frequency and low-frequency surface asperities is reduced by controlling characteristics of a surface region under a first regime to flow material from the surface asperities. A second regime is implemented to reduce a height of high-frequency surface asperities in the surface region by controlling characteristics of the surface region under a second regime to flow material that is predominantly from the high-frequency surface asperities, the controlled characteristics in the second regime being different than the controlled characteristics in the first regime. Such aspects may include, for example, controlling melt pools in each regime via energy pulses, to respectively mitigate/reduce the asperities.
PLANING-POLISHING APPARATUS AND METHOD USING FEMTOSECOND PULSED LASER
Proposed is a planing-polishing apparatus 1 using a femtosecond pulsed laser and performing polishing of a planar workpiece to reduce surface roughness of the workpiece after performing planing of the workpiece using a femtosecond pulsed laser beam.
ADDITIVE MANUFACTURING SYSTEM, ADDITIVE MANUFACTURING METHOD AND COMPUTER-READABLE MEDIUM
An additive manufacturing system is disclosed including an additive manufacturing unit, a surface treatment unit and a control unit. The additive manufacturing unit includes a material feeding device and a heat source device, the material feeding device is configured to supply a material onto a substrate for layer-by-layer additive manufacturing, and the heat source device is configured to provide a heat source for fusing the material layer by layer to form material layers. The surface treatment unit is configured to perform surface treatment on the material layers. The control unit is configured to control the additive manufacturing unit and the surface treatment unit. The surface treatment unit is configured to perform surface treatment on a material layer N after the material layer N is formed and before a material layer N+1 is formed on the material layer N, where N is an integer greater than or equal to 1.
METHOD FOR MANUFACTURING ANNULAR GLASS PLATE, METHOD FOR MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC DISK, METHOD FOR MANUFACTURING MAGNETIC DISK, ANNULAR GLASS PLATE, GLASS SUBSTRATE FOR MAGNETIC DISK, AND MAGNETIC DISK
A method for manufacturing an annular glass plate that has an outer circumferential edge surface, an inner circumferential edge surface, and a thickness not larger than 0.6 mm includes processing for manufacturing an annular glass plate by irradiating each of the outer circumferential edge surface and the inner circumferential edge surface of an annular glass blank with a laser beam to melt the outer circumferential edge surface and the inner circumferential edge surface and form molten surfaces such that the molten surfaces in the outer circumferential edge surface and the inner circumferential edge surface each have an arithmetic average surface roughness Ra not larger than 0.1 μm, and the surface roughness of the molten surface in the inner circumferential edge surface becomes larger than the surface roughness of the molten surface in the outer circumferential edge surface.
METHOD FOR MANUFACTURING GLASS PLATE, METHOD FOR CHAMFERING GLASS PLATE, AND METHOD FOR MANUFACTURING MAGNETIC DISK
A method for manufacturing a disk-shaped glass plate in which shape processing is performed on an edge surface of the glass plate includes processing the edge surface into a target shape by irradiating the edge surface with a laser beam while moving the laser beam relative to the edge surface in a circumferential direction of the glass plate. A cross-sectional intensity distribution of the laser beam with which the edge surface is irradiated is a single mode, and W1>Th holds true and Pd×Th is in a range of 0.8 to 3.5 [W/mm] when a width of luminous flux of the laser beam in a thickness direction of the glass plate at an irradiation position of the edge surface is W1 [mm], a thickness of the glass plate is Th [mm], and a power density of the laser beam is Pd.
LASER MACHINING EQUIPMENT FOR GRINDING SEMICONDUCTOR WAFERS
The present disclosure relates to laser machining equipment for grinding semiconductor wafers, and belongs to the field of laser machining equipment. The laser machining equipment mainly comprises a special fixture, laser measuring meters, a laser emission module, an X-axis movement system, a Y-axis movement system, a Z-axis movement system, a liftable laser machining workbench, data transmission cables, an industrial personal computer and a human-computer interface. Compared with conventional wafer grinding equipment, short-pulse lasers are used as wafer grinding tool, and the problems of thermal influence and environmental pollution caused by chemical mechanical grinding method can be solved; laser machining is non-contact machining, so that the problem of wafer breakage caused by mechanical force can be avoided; and a wafer geometric parameter automatic detection system is adopted, automatic measurement of geometric parameters and automatic judgment of machining allowance can be achieved, and the wafer grinding quality can be accurately controlled.