A bulged, forward-acting rupture disc (10) and a pressure relief device (38) incorporating a rupture disc (10), having a line of opening (28) formed in the transition region (26) of the disc between the bulged section (12) and flange section (14) are provided. The line of opening (28) is a stress-concentrating feature that, in conjunction with a stress-intensifying edge (68) located on an associated outlet ring (42), facilitates opening of the disc (10) when exposed to a predetermined pressure acting upon the concave face (20) of the bulged section (12).

A bulged, forward-acting rupture disc (10) and a pressure relief device (38) incorporating a rupture disc (10), having a line of opening (28) formed in the transition region (26) of the disc between the bulged section (12) and flange section (14) are provided. The line of opening (28) is a stress-concentrating feature that, in conjunction with a stress-intensifying edge (68) located on an associated outlet ring (42), facilitates opening of the disc (10) when exposed to a predetermined pressure acting upon the concave face (20) of the bulged section (12).

Methods for singulating an optical waveguide material at a contour include directing a first laser beam onto a first side of the optical waveguide material to generate a first group of perforations in the optical waveguide material. A second laser beam is directed onto a second side of the optical waveguide material to generate a second group of perforations in the optical waveguide material. The second side is opposite the first side. The first group of perforations and the second group of perforations define a perforation zone at the contour. A third laser beam is directed at the perforation zone to singulate the optical waveguide material at the perforation zone.

Methods for singulating an optical waveguide material at a contour include directing a first laser beam onto a first side of the optical waveguide material to generate a first group of perforations in the optical waveguide material. A second laser beam is directed onto a second side of the optical waveguide material to generate a second group of perforations in the optical waveguide material. The second side is opposite the first side. The first group of perforations and the second group of perforations define a perforation zone at the contour. A third laser beam is directed at the perforation zone to singulate the optical waveguide material at the perforation zone.

A method for forming at least one freestanding microstructure on a diamond crystal includes the step of removing material from the diamond crystal so as to form a structured surface, wherein the removing of the material includes creating at least two trenches, each trench having a bottom and two side walls and wherein adjacent side walls of the at least two trenches form side walls of the structured surface. The method also includes the steps of depositing at least one masking layer on the structured surface, removing at least a portion of the at least one masking layer from the bottom of each of the at least two trenches, removing additional material from the diamond crystal at least along the side walls so as to deepen the trenches, and undercutting the diamond crystal so as to form the freestanding microstructure.

A method of manufacturing chips includes a preparing step of preparing a wafer unit in which a wafer having a plurality of devices formed thereon is affixed to a tape with a die-attach layer being interposed therebetween, the die-attach layer including fillers, and the devices are protected by a protective member and a face side of the wafer is exposed along the projected dicing lines, a wafer processing step of performing plasma etching on the wafer from the face side thereof to divide the wafer and expose the die-attach layer along the projected dicing lines, a die-attach layer processing step of performing plasma etching on the die-attach layer from the face side of the wafer, and a cleaning step of ejecting a fluid to the face side of the wafer to remove filler residuals along the projected dicing lines from the wafer unit.

A method of manufacturing chips includes a preparing step of preparing a wafer unit in which a wafer having a plurality of devices formed thereon is affixed to a tape with a die-attach layer being interposed therebetween, the die-attach layer including fillers, and the devices are protected by a protective member and a face side of the wafer is exposed along the projected dicing lines, a wafer processing step of performing plasma etching on the wafer from the face side thereof to divide the wafer and expose the die-attach layer along the projected dicing lines, a die-attach layer processing step of performing plasma etching on the die-attach layer from the face side of the wafer, and a cleaning step of ejecting a fluid to the face side of the wafer to remove filler residuals along the projected dicing lines from the wafer unit.

Disclosed is a method for an all-laser hybrid additive manufacturing. After a matrix is obtained by means of selective laser melting forming, a subtractive forming is carried out on the matrix by means of a pulse laser to form a cavity, and the cavity is then packaged to obtain a forming material with an internal cavity structure. A laser precision packaging method is used in the method based on the melting of the laser selective region. Also disclosed is the apparatus, comprising a laser unit (2), a control unit (4) and a forming unit (6). The laser unit is in light path connection with the forming unit, and the control unit is electrically connected with the laser unit and the forming unit respectively. The laser unit comprises a first laser light source to and a second laser light source. The forming unit comprises a welding unit (68), and the welding unit is controlled by the control unit and is matched with the laser unit for the additive manufacturing.

Disclosed is a method for an all-laser hybrid additive manufacturing. After a matrix is obtained by means of selective laser melting forming, a subtractive forming is carried out on the matrix by means of a pulse laser to form a cavity, and the cavity is then packaged to obtain a forming material with an internal cavity structure. A laser precision packaging method is used in the method based on the melting of the laser selective region. Also disclosed is the apparatus, comprising a laser unit (2), a control unit (4) and a forming unit (6). The laser unit is in light path connection with the forming unit, and the control unit is electrically connected with the laser unit and the forming unit respectively. The laser unit comprises a first laser light source to and a second laser light source. The forming unit comprises a welding unit (68), and the welding unit is controlled by the control unit and is matched with the laser unit for the additive manufacturing.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.