Methods, systems, devices, and substrates are described. In some examples, an apparatus may include optical components configured to adjust an input to a laser cutting optic for modifying a substrate (e.g., an optically transmissive substrate). In some examples, the optical components may include a beam deflector, a first optic configured to output a first laser beam with a first beam width, and a second optic configured to output a second laser beam with a second beam width. In some examples, the beam deflector may modify an optical path of a pulsed laser (e.g., through the first optic or through the second optic), which may result in an input to the laser cutting optic having a beam width corresponding to the first optic or the second optic. The different input beam widths may modify a line focus intensity of an output of the laser cutting optic when modifying the substrate.

A cutting method of a mother substrate includes: irradiating a laser to the mother substrate at first intervals along a first cutting line overlapping dummy areas positioned adjacent to sides of each of display panel areas on the mother substrate; and irradiating the laser to the mother substrate at second intervals different from the first intervals along the first cutting line overlapping edge areas positioned adjacent to corner portions of each of the display panel areas.

The present invention disclosed a method of producing a three-dimensional porous tissue in-growth structure. The method includes the steps of depositing a first layer of metal powder and scanning the first layer of metal powder with a laser beam to form a portion of a plurality of predetermined unit cells. Depositing at least one additional layer of metal powder onto a previous layer and repeating the step of scanning a laser beam for at least one of the additional layers in order to continuing forming the predetermined unit cells. The method further includes continuing the depositing and scanning steps to form a medical implant.

The present invention disclosed a method of producing a three-dimensional porous tissue in-growth structure. The method includes the steps of depositing a first layer of metal powder and scanning the first layer of metal powder with a laser beam to form a portion of a plurality of predetermined unit cells. Depositing at least one additional layer of metal powder onto a previous layer and repeating the step of scanning a laser beam for at least one of the additional layers in order to continuing forming the predetermined unit cells. The method further includes continuing the depositing and scanning steps to form a medical implant.

A method is for manufacturing a stone, in particular for a timepiece, from a mineral body of monocrystalline or polycrystalline type. The method includes an ablation step in which the body is subjected to a material ablation by scanning on at least one face of the body using ultra-short pulse laser radiation whose duration is less than one hundred picoseconds, and whose beam is guided by a precession system having at least three axes to at least partially cancel the angle of the laser cone, which is due to the focusing of the laser. A mineral stone of monocrystalline or polycrystalline type, in particular for a horological movement, is likely to be obtained by the method. The stone includes in particular a face provided with a peripheral rim, in particular for laterally clamping an endstone in a bearing.

A method is for manufacturing a stone, in particular for a timepiece, from a mineral body of monocrystalline or polycrystalline type. The method includes an ablation step in which the body is subjected to a material ablation by scanning on at least one face of the body using ultra-short pulse laser radiation whose duration is less than one hundred picoseconds, and whose beam is guided by a precession system having at least three axes to at least partially cancel the angle of the laser cone, which is due to the focusing of the laser. A mineral stone of monocrystalline or polycrystalline type, in particular for a horological movement, is likely to be obtained by the method. The stone includes in particular a face provided with a peripheral rim, in particular for laterally clamping an endstone in a bearing.

A method for cutting substrate includes the steps of forming a cutting path on a substrate, applying a laser beam onto the substrate to form a plurality of holes with a pitch less than or equal to 20 micro meters along the cutting path, increasing the temperature of an area of the substrate containing the plurality of holes, and if necessary, applying force to separate the substrate along the plurality of holes. An equipment for cutting substrate includes a carrying platform, a laser generating device, a heating device, and a control module. The carrying platform is used for carrying a substrate. The laser generating device can generate a laser beam. The control module can control the laser beam generated by the laser generating device to move on the substrate along a track, and then guide the heating device to heat the substrate along the track.

A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

A method for producing a diffusion-optimized tipping paper for tobacco products, especially filter cigarettes, by plasma perforation of the web of tipping paper for the purpose of maximum carbon monoxide reduction, wherein the diffusivity and the permeability P of the perforated tipping paper are measured in-line and diffusivity is maximized by controlling the perforation parameters, the definable target permeability P.sub.soll being maintained at all times.