Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

A cover window includes a plastic layer and a first hard coating layer disposed on an upper surface of the plastic layer. An edge of the cover window includes a vertical side part perpendicular to the upper surface of the plastic layer. A first inclination part is connected to the vertical side part and is inclined with respect to the vertical side part. The vertical side part and the first inclination part include a mechanical processing trace. An edge of the first hard coating layer adjacent to the first inclination part includes a laser processing trace.

A spatial filter is made by forming a structure comprising a focusing element and an opaque surface, the opaque surface being disposed remotely from the focusing element in substantially the same plane as a focal plane of the focusing element; and by forming a pinhole in the opaque surface at or adjacent to a focal point of the focusing element by transmitting a substantially collimated laser beam through the focusing element so that a point optimally corresponding to the focal point is identified on the opaque surface and imperfection of the focusing element, if any, is reflected on the shape and position of the pinhole so formed.

A spatial filter is made by forming a structure comprising a focusing element and an opaque surface, the opaque surface being disposed remotely from the focusing element in substantially the same plane as a focal plane of the focusing element; and by forming a pinhole in the opaque surface at or adjacent to a focal point of the focusing element by transmitting a substantially collimated laser beam through the focusing element so that a point optimally corresponding to the focal point is identified on the opaque surface and imperfection of the focusing element, if any, is reflected on the shape and position of the pinhole so formed.

A packing bag to store a stored article Z with tight seal by a welded sheet material 1 of resin in which a separation-prepared line portion 5, separable by predetermined tensile force F by human hands to take out the stored article Z, is provided along an opening-prepared side portion 10, the sheet material 1 has a layered unit construction in which first and second welding resin layers 61A and 61B are disposed on both sides, and a barrier layer is disposed on a middle position, the separation-prepared line portion 5 is composed of a half-cut first laser-worked groove 7A concaved on the first welding resin layer 61A and a half-cut second laser-worked groove 7B concaved on the second welding resin layer 61B, and, the first and second laser-worked grooves 7A and 7B are formed barely damaging the barrier layer 60.

A packing bag to store a stored article Z with tight seal by a welded sheet material 1 of resin in which a separation-prepared line portion 5, separable by predetermined tensile force F by human hands to take out the stored article Z, is provided along an opening-prepared side portion 10, the sheet material 1 has a layered unit construction in which first and second welding resin layers 61A and 61B are disposed on both sides, and a barrier layer is disposed on a middle position, the separation-prepared line portion 5 is composed of a half-cut first laser-worked groove 7A concaved on the first welding resin layer 61A and a half-cut second laser-worked groove 7B concaved on the second welding resin layer 61B, and, the first and second laser-worked grooves 7A and 7B are formed barely damaging the barrier layer 60.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

A mask-integrated surface protective tape, containing: a substrate film; a temporary-adhesive layer provided on the substrate film; and a mask material layer provided on the temporary-adhesive layer; wherein the mask material layer and the temporary-adhesive layer each contain a (meth)acrylic copolymer; and wherein the mask-integrated surface protective tape is used for a method of producing a semiconductor chip utilizing a plasma-dicing.

A mask-integrated surface protective tape, containing: a substrate film; a temporary-adhesive layer provided on the substrate film; and a mask material layer provided on the temporary-adhesive layer; wherein the mask material layer and the temporary-adhesive layer each contain a (meth)acrylic copolymer; and wherein the mask-integrated surface protective tape is used for a method of producing a semiconductor chip utilizing a plasma-dicing.