A method of manufacturing chips includes a preparing step of preparing a wafer unit in which a wafer having a plurality of devices formed thereon is affixed to a tape with a die-attach layer being interposed therebetween, the die-attach layer including fillers, and the devices are protected by a protective member and a face side of the wafer is exposed along the projected dicing lines, a wafer processing step of performing plasma etching on the wafer from the face side thereof to divide the wafer and expose the die-attach layer along the projected dicing lines, a die-attach layer processing step of performing plasma etching on the die-attach layer from the face side of the wafer, and a cleaning step of ejecting a fluid to the face side of the wafer to remove filler residuals along the projected dicing lines from the wafer unit.

A glass sheet processing apparatus includes a first gantry assembly that extends across a glass sheet in a cross-machine direction. The first gantry assembly includes a processing head that moves along a length of the first gantry assembly and includes a laser comprising an optical arrangement positioned in a beam path of the laser providing a laser beam focal line that is formed on a beam output side of the optical arrangement. A second gantry assembly extends across the glass sheet in the cross-machine direction. The second gantry assembly includes a processing head that moves along a length of the second gantry assembly.

A glass sheet processing apparatus includes a first gantry assembly that extends across a glass sheet in a cross-machine direction. The first gantry assembly includes a processing head that moves along a length of the first gantry assembly and includes a laser comprising an optical arrangement positioned in a beam path of the laser providing a laser beam focal line that is formed on a beam output side of the optical arrangement. A second gantry assembly extends across the glass sheet in the cross-machine direction. The second gantry assembly includes a processing head that moves along a length of the second gantry assembly.

A method of producing a glass substrate having a hole is provided. The method includes preparing the glass substrate having a first surface and a second surface facing each other; forming a hole in the glass substrate with a laser; and annealing the glass substrate placed on a first support substrate having a thermal expansion coefficient whose difference from a thermal expansion coefficient of the glass substrate is less than or equal to 1 ppm/K, where the first support substrate is placed on a second support substrate having a thermal expansion coefficient of less than or equal to 10 ppm/K.

A method of producing a glass substrate having a hole is provided. The method includes preparing the glass substrate having a first surface and a second surface facing each other; forming a hole in the glass substrate with a laser; and annealing the glass substrate placed on a first support substrate having a thermal expansion coefficient whose difference from a thermal expansion coefficient of the glass substrate is less than or equal to 1 ppm/K, where the first support substrate is placed on a second support substrate having a thermal expansion coefficient of less than or equal to 10 ppm/K.

Disclosed is a device for the regulation of light transmission. In particular, switchable windows and methods for their preparation are disclosed. The switchable windows include electrically switchable devices which in one optical switching state are capable of portraying closed patterns or images without the need for providing complex electrical contacting.

A laser processing method for cutting a base material, including stacked first and second layers having different thermal expansion coefficients, includes radiating laser light onto a first inter-layer part under prescribed first inter-layer conditions, to cut the first inter-layer part, which extends from a position in the vicinity of a layer boundary inward of the surface of the second layer, through the layer boundary between the second layer and the first layer, to a position in the vicinity of a layer boundary inward of said one surface of the first layer, and radiating the laser light onto a part of the first layer inward from the position in the vicinity of the layer boundary, under first conditions, to cut the first layer, wherein the first inter-layer condition is a condition under which the amount of heat input by the laser light is less than under the first condition.

Embodiments of an ultrashort pulse laser marking apparatus for forming indelible identifiers on discreet consumable articles, and corresponding methods, are disclosed. An ultrashort pulse laser transmission element of the apparatus is configured to transmit a beam of laser energy toward a marking zone to form an optically-readable indelible identifier on discrete consumable articles. The beam may have a pulse duration less than 10 picosecond, and a wavelength of less than 1.5 microns. The consumable articles may comprise a photoreactive pigment configured to undergo a color change upon exposure to the beam of laser energy, and the indelible identifier may be defined by the color change. Alternatively or in addition, the optical readability may be at least in part by way of a primary pattern reflected light intensity being distinguishable from a baseline reflected light intensity or from a secondary reflected light intensity from a viewpoint outward of the article.

A processing method of a workpiece used when the workpiece is processed is provided. The processing method of a workpiece includes a disposing step of disposing the workpiece in a gas containing a substance that generates an active species that reacts with the workpiece, a measurement step of measuring the distribution of the thickness of the workpiece disposed in the gas, and a laser beam irradiation step of irradiating the workpiece in the gas with a laser beam of which the power is adjusted based on the distribution of the thickness measured in the measurement step. In the laser beam irradiation step, the removal amount by which a region irradiated with the laser beam in the workpiece is removed by the active species is controlled by irradiating the workpiece with the laser beam of which the power is adjusted.

A processing method of a workpiece used when the workpiece is processed is provided. The processing method of a workpiece includes a disposing step of disposing the workpiece in a gas containing a substance that generates an active species that reacts with the workpiece, a measurement step of measuring the distribution of the thickness of the workpiece disposed in the gas, and a laser beam irradiation step of irradiating the workpiece in the gas with a laser beam of which the power is adjusted based on the distribution of the thickness measured in the measurement step. In the laser beam irradiation step, the removal amount by which a region irradiated with the laser beam in the workpiece is removed by the active species is controlled by irradiating the workpiece with the laser beam of which the power is adjusted.