A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself consists of: (a) pure silver consisting of (a1) silver in an amount in the range of from 99.99 to 100 wt.-% and (a2) further components in a total amount of from 0 to 100 wt.-ppm or (b) doped silver consisting of (b1) silver in an amount in the range of from >99.49 to 99.997 wt.-%, (b2) at least one doping element selected from the group consisting of calcium, nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount of from 30 to <5000 wt.-ppm and (b3) further components in a total amount of from 0 to 100 wt.-ppm, or (c) a silver alloy consisting of (c1) silver in an amount in the range of from 89.99 to 99.5 wt.-%, (c2) at least one alloying element selected from the group consisting of nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount in the range of from 0.5 to 10 wt.-% and (c3) further components in a total amount of from 0 to 100 wt.-ppm, or (d) a doped silver alloy consisting of (d1) silver in an amount in the range of from >89.49 to 99.497 wt.-%, (d2) at least one doping element selected from the group consisting of calcium, nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount of from 30 to <5000 wt.-ppm, (d3) at least one alloying element selected from the group consisting of nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount in the range of from 0.5 to 10 wt.-% and (d4) further components in a total amount of from 0 to 100 wt.-ppm, wherein the at least one doping element (d2) is other than the at least one alloying element (d3), wherein the individual amount of any further component is less than 30 wt.-ppm, wherein the individual amount of any doping element is at least 30 wt.-ppm, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, and wherein the coating layer is a double-layer comprised of a 1 to 1000 nm inner layer of gold and an adjacent 0.5 to 100 nm thick outer layer of palladium or a double-layer comprised of a 0.5 to 100 nm thick inner layer of palladium and an adjacent >200 to 1000 nm thick outer layer of gold.

Disclosed herein is a method of forming an alloy material for use in a wire. The method includes forming a master alloy containing lead and silver; and creating a molten wire alloy by combining the master alloy, additional lead, and a third material in a vessel. The method also includes flowing argon gas through and over the molten wire alloy. The method also includes drawing the molten alloy from the vessel through an actively cooled die, and solidifying the molten wire alloy to form a bar of wire alloy.

A lead—free solder wire includes a core wire with a first alloy and a shell coating layer with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, In Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the shell coating layer is applied to a surface of the core wire. In another implementation, the lead free solder wire may include a first wire with a first alloy and a second wire with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the first alloy of the first wire and the second alloy of the second wire are braided together.

Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.

A soldering alloy includes an alloy composition consisting of 13-22 mass % of In, 0.5-2.8 mass % of Ag, 0.5-5.0 mass % of Bi, 0.002-0.05 mass % of Ni, and a balance Sn. A soldering alloy, a soldering paste, a preform solder, a soldering ball, a wire solder, a resin flux cored solder and a solder joint, each of which is composed of the soldering alloy. An electronic circuit board and a multi-layer electronic circuit board joined by using the solder joint.

A layer manufacturing apparatus comprising: (a) a main chamber; (b) one or more energy emission devices; (c) one or more work piece supports; (d) a plurality of material delivery devices; wherein the plurality of material delivery devices are connected to one or more spools that are located external of the main chamber.

Provided is a wire for electric bonding, which includes a solder wire and a composition for bonding adjacent to the solder wire, the solder wire is wet when reaches to a melting point as heat is transferred, the composition for bonding includes an epoxy resin, a reducing agent, and a curing agent, the reducing agent removes a metal oxide formed on a surface of the solder wire, and the epoxy resin is cured by chemically reacting with the reducing agent and the curing agent at a curing temperature.

A composition for welding or brazing aluminum comprises silicon (Si) and magnesium (Mg) along with aluminum in an alloy suitable for use in welding and brazing. The Si content may vary between approximately 5.0 and 6.0 wt %, and the Mg content may vary between approximately 0.15 wt % and 0.50 wt %. The alloy is well suited for operations in which little or no dilution from the base metal affects the Si and/or Mg content of the filler metal. The Si content promotes fluidity and avoids stress concentrations and cracking. The Mg content provides enhanced strength. Resulting joints may have a strength at least equal to that of the base metal with little or no dilution (e.g., draw of Mg). The joints may be both heat treated and artificially aged or naturally aged.

Disclosed are an aluminum-coated blank, a manufacturing method thereof, and an apparatus for manufacturing the same. The blank includes two or more aluminum-coated steel sheets connected together by a joint, each of the steel sheets including: a base steel sheet including 0.01-0.5 wt % of carbon, 0.01-1.0 wt % of silicon, 0.5-3.0 wt % of manganese, greater than 0 but not greater than 0.05 wt % of phosphorus, greater than 0 but not greater than 0.01 wt % of sulfur, greater than 0 but not greater than 0.1 wt % of aluminum, greater than 0 but not greater than 0.001 wt % of nitrogen, and the balance of iron and other inevitable impurities; and a coating layer including aluminum and formed on at least one surface of the base steel sheet.

There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.