A sputtering target-backing plate assembly obtained by bonding a sputtering target and a backing plate using a brazing material, wherein a braze bonding layer which bonds the sputtering target and the backing plate contains a material having thermal conductivity that is higher than that of the brazing material in an amount of 5 vol % or more and 50 vol % or less, and a thickness of the braze bonding layer is 100 μm or more and 700 μm or less. An object is to prevent the seepage of the brazing material while maintaining the thickness of the braze bonding layer.

A magnetic-field melting solder that melts by the action of an AC magnetic field is provided. The magnetic-field melting solder includes solder material; and magnetic material composing of ferrite or Ni, a proportion of the magnetic material to the entire magnetic-field melting solder being 0.005% to 5% by weight. A joining method using the magnetic-field melting solder includes providing the magnetic-field melting solder between an electrode on a substrate and an electrode of an electronic component, and joining together the electrode on the substrate and the electrode of the electronic component by generating an AC magnetic field around the substrate and thereby melting the magnetic-field melting solder.

A magnetic-field melting solder that melts by the action of an AC magnetic field is provided. The magnetic-field melting solder includes solder material; and magnetic material composing of ferrite or Ni, a proportion of the magnetic material to the entire magnetic-field melting solder being 0.005% to 5% by weight. A joining method using the magnetic-field melting solder includes providing the magnetic-field melting solder between an electrode on a substrate and an electrode of an electronic component, and joining together the electrode on the substrate and the electrode of the electronic component by generating an AC magnetic field around the substrate and thereby melting the magnetic-field melting solder.

A solder paste includes a first solder alloy powder in an amount ranging from 30% to 95% by weight. The first solder alloy powder includes a first solder alloy with a solidus temperature of 200° C. to 260° C. The first solder alloy includes an Sn—Cu alloy or an Sn—Cu—Ag alloy. The solder paste further includes a second solder alloy powder in an amount ranging from 5% to 70% by weight, and a solder flux. The second solder alloy powder includes a second solder alloy with a solidus temperature below 250° C. The solder paste has a variable melting point. In multiple reflow soldering, a remelting of the solder paste is inhibited under different temperature conditions so that no functional failure occurs during assembly and/or packaging of PCBs or electronic devices due to melting of solder.

A solder paste includes a first solder alloy powder in an amount ranging from 30% to 95% by weight. The first solder alloy powder includes a first solder alloy with a solidus temperature of 200° C. to 260° C. The first solder alloy includes an Sn—Cu alloy or an Sn—Cu—Ag alloy. The solder paste further includes a second solder alloy powder in an amount ranging from 5% to 70% by weight, and a solder flux. The second solder alloy powder includes a second solder alloy with a solidus temperature below 250° C. The solder paste has a variable melting point. In multiple reflow soldering, a remelting of the solder paste is inhibited under different temperature conditions so that no functional failure occurs during assembly and/or packaging of PCBs or electronic devices due to melting of solder.

Provided are a Sn—Bi—In-based low melting-point joining member used in a Pb-free electroconductive joining method in mounting a semiconductor component, and is usable for low-temperature joining, and a manufacturing method therefor.

A Sn—Bi—In-based low melting-point joining member, including a Sn—Bi—In alloy that has a composition within a range represented by a quadrangle in a Sn—Bi—In ternary phase diagram, a first quadrangle having four vertices including: Point 1 (1, 69, 30), Point 2 (26, 52, 22), Point 3 (40, 10, 50), and Point 4 (1, 25, 74), where Point (x, y, z) is defined as a point of x mass % Sn, y mass % Bi and z mass % In, and that also has a melting point of 60 to 110° C. As well as a method for producing a Sn—Bi—In-based low melting-point joining member, including a plating step of forming a plated laminate on an object to be plated, the plated laminate including a laminated plating layer obtained by performing Sn plating, Bi plating, and In plating respectively such that the laminated plating layer has a composition within the range represented by the first quadrangle.

Provided are a Sn—Bi—In-based low melting-point joining member used in a Pb-free electroconductive joining method in mounting a semiconductor component, and is usable for low-temperature joining, and a manufacturing method therefor.

A Sn—Bi—In-based low melting-point joining member, including a Sn—Bi—In alloy that has a composition within a range represented by a quadrangle in a Sn—Bi—In ternary phase diagram, a first quadrangle having four vertices including: Point 1 (1, 69, 30), Point 2 (26, 52, 22), Point 3 (40, 10, 50), and Point 4 (1, 25, 74), where Point (x, y, z) is defined as a point of x mass % Sn, y mass % Bi and z mass % In, and that also has a melting point of 60 to 110° C. As well as a method for producing a Sn—Bi—In-based low melting-point joining member, including a plating step of forming a plated laminate on an object to be plated, the plated laminate including a laminated plating layer obtained by performing Sn plating, Bi plating, and In plating respectively such that the laminated plating layer has a composition within the range represented by the first quadrangle.

Some implementations of the disclosure describe a solder paste consisting essentially of: 10 wt % to 90 wt % of a first solder alloy powder, the first solder alloy powder consisting of a Sn—Sb alloy, a Sn—Ag—Cu—Sb alloy, a Sn—Ag—Cu—Sb—In alloy, a Sn—Ag—Cu—Sb—Bi alloy, or Sn—Ag—Cu—Sb—Bi—In alloy; 10 wt % to 90 wt % of a second solder alloy powder, the second solder alloy powder consisting of an Sn—Ag—Cu alloy or Sn—Ag—Cu—Bi alloy, and the second solder alloy powder having a lower solidus temperature than the first solder alloy powder; and flux.

A lead-free solder contains 93.0 mass % or more and 98.95 mass % or less of indium, 1.0 mass % or more and 4.0 mass % or less of tin, and an addition metal. The addition metal contains at least one of silver, antimony, copper, or nickel. The addition metal is neither indium nor tin. The total of mass percentage of the addition metal is 0.05 mass % or more and 6.0 mass % or less. The sum of the total mass percentage of the addition metal, the mass percentage of indium, and the mass percentage of tin is 100 mass % or less.

A lead-free solder contains 93.0 mass % or more and 98.95 mass % or less of indium, 1.0 mass % or more and 4.0 mass % or less of tin, and an addition metal. The addition metal contains at least one of silver, antimony, copper, or nickel. The addition metal is neither indium nor tin. The total of mass percentage of the addition metal is 0.05 mass % or more and 6.0 mass % or less. The sum of the total mass percentage of the addition metal, the mass percentage of indium, and the mass percentage of tin is 100 mass % or less.