A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

Provided are a solder alloy and a solder joint, which have a narrow ΔT to suppress solder bridges and solder icicles, and a small amount of dross generated in a solder tank, suppress Cu leaching, and have higher strength. The solder alloy has an alloy composition of, by mass %, Cu: more than 2.0% and less than 3.0%; Ni: 0.010% or more and less than 0.30%; and Ge: 0.0010 to 0.20% with the balance being Sn. Preferably, by mass %, Cu is more than 2.5% and less than 3.0%, and the alloy composition satisfies the following relations (1) and (2): ≤2.400≤Cu+Ni+Ge≤3.190 (1), and 0.33≤Ge/Ni≤1.04 (2). Cu, Ni, and Ge in the relations (1) and (2) each represent the contents (mass %) in the alloy composition.

Some implementations of the disclosure are directed to a solder preform, comprising: a solder alloy body, the solder alloy body comprising at least one opening; and a flux core embedded in the solder alloy body, the flux core comprising a thermochromic indicator, wherein during reflow soldering, the flux core comprising the thermochromic indicator is configured to flow out of the at least one opening of the solder alloy.

Some implementations of the disclosure are directed to a solder preform, comprising: a solder alloy body, the solder alloy body comprising at least one opening; and a flux core embedded in the solder alloy body, the flux core comprising a thermochromic indicator, wherein during reflow soldering, the flux core comprising the thermochromic indicator is configured to flow out of the at least one opening of the solder alloy.

A bonding sheet (X) of the present invention includes a matrix resin, a plurality of solder particles, and a plurality of flux particles, and has a sheet thickness T. In the bonding sheet (X), a particle size D.sub.50 of the solder particles is 12 μm or less, a particle size D.sub.50 of the flux particles is 30 μm or less, and a ratio of a particle size D.sub.90 of the solder particles and a particle size D.sub.90 of the flux particles to the sheet thickness T is 0.95 or less.

Provided are a solder alloy, a solder ball, and a solder joint which have an excellent pin contact performance and a high bonding strength. The solder alloy has an alloy composition consisting of, by mass %, Ag: 0.8 to 1.5%, Cu: 0.1 to 1.0%, Ni: 0.01 to 0.10%, and P: 0.006% to 0.009%, with the balance being Sn. The alloy composition preferably satisfies the following relations (1) and (2): 2.0≤Ag×Cu×Ni/P≤25, 0.500≤Sn×P≤0.778. Ag, Cu, Ni, P, and Sn in the relations (1) and (2) each represent the contents (mass %) in the alloy composition.

A semiconductor device includes a semiconductor chip having first and second main electrodes disposed on opposite surfaces of a silicon carbide substrate, first and second heat dissipation members disposed so as to sandwich the semiconductor chip, and joining members disposed between the first main electrode and the first heat dissipation member and between the second main electrode and the second heat dissipation member. At least one of the joining members is made of a lead-free solder having an alloy composition that contains 3.2 to 3.8 mass % Ag, 0.6 to 0.8 mass % Cu, 0.01 to 0.2 mass % Ni, x mass % Sb, y mass % Bi, 0.001 to 0.3 mass % Co, 0.001 to 0.2 mass % P, and a balance of Sn, where x and y satisfy relational expressions of x+2y≤11 mass %, x+14y≤42 mass %, and x≥5.1 mass %.

A semiconductor device includes a semiconductor chip having first and second main electrodes disposed on opposite surfaces of a silicon carbide substrate, first and second heat dissipation members disposed so as to sandwich the semiconductor chip, and joining members disposed between the first main electrode and the first heat dissipation member and between the second main electrode and the second heat dissipation member. At least one of the joining members is made of a lead-free solder having an alloy composition that contains 3.2 to 3.8 mass % Ag, 0.6 to 0.8 mass % Cu, 0.01 to 0.2 mass % Ni, x mass % Sb, y mass % Bi, 0.001 to 0.3 mass % Co, 0.001 to 0.2 mass % P, and a balance of Sn, where x and y satisfy relational expressions of x+2y≤11 mass %, x+14y≤42 mass %, and x≥5.1 mass %.

Provided are a solder alloy, a solder paste, a solder ball, a solder preform, and a solder joint, which have a melting temperature within a predetermined range, and high tensile strength and shear strength, suppress generation of voids, and have excellent mountability due to their thin oxide films. The solder alloy has an alloy composition consisting of, by mass %, Ag: 2.5 to 3.7%, Cu: 0.25 to 0.95%, Bi: 3.0 to 3.9%, and In: 0.5 to 2.3%, with the balance being Sn, and the alloy composition satisfies the following relations (1) and (2): 8.1≤Ag+2Cu+Bi+In ≤11.5 (1), and 1.00≤(Bi+In)/Ag≤1.66 (2). Ag, Cu, Bi and In in the relations (1) and (2) each represent the contents (mass %) in the alloy composition.

A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.