A semiconductor device includes a semiconductor chip made of a SiC substrate and having main electrodes on one surface and a rear surface, first and second heat sinks, respectively, disposed adjacent to the one surface and the rear surface, a terminal member interposed between the second heat sink and the semiconductor chip, and a plurality of bonding members disposed between the main electrodes, the first and second heat sinks, and the terminal member. The terminal member includes plural types of metal layers symmetrically layered in the plate thickness direction. The terminal member as a whole has a coefficient of linear expansion at least in a direction orthogonal to the plate thickness direction in a range larger than that of the semiconductor chip and smaller than that of the second heat sink.

Multi-part abrasive tools are disclosed herein. In one embodiment, an abrasive tool includes a first body, a second body, and a braze layer that couples the first body to the second body. The braze layer includes a braze alloy having a liquidus temperature and insoluble particles at least partially surrounded by the braze alloy. The insoluble particles are insoluble with the braze alloy at temperatures at least 100° C. above the liquidus temperature of the braze alloy.

This paste composition includes silver particles (A), a thermosetting resin (B), a curing agent (C), and a solvent (D). A shrinkage rate after curing of the paste composition is 15% or less.

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.

The disclosure describes example techniques and assemblies for joining a first component and a second component. The techniques may include positioning the first and second component adjacent to each other to define a joint region between adjacent portions of the first component and the second component. The techniques may also include inserting a solid retainer material into the joint region through an aperture in one of the first component or the second component to form a mechanical interlock between the first component and the second component and sealing the aperture to retain the solid retainer material within the joint region. The solid retainer material includes at least one of a metal, a metal alloy, or a ceramic.

This blade repair method has: a first welding step in which overlay welding in which a first welding material is used is performed to form a notched part and a bury a first region positioned on a blade-body side with a first welding material; and a second welding step in which, after the first welding step, overlay welding in which a second welding material is used is performed to form a notched part and bury a second region positioned on a front-surface side of a platform with the second welding material. The high-temperature strength of the second welding material is higher than the high-temperature strength of the first welding material, the weldability of the first welding material is higher than the weldability of the second welding material, and the second region is located in a range from 1.0 mm to 3.0 mm (inclusive) from the front surface of the platform toward the blade body.

This blade repair method has: a first welding step in which overlay welding in which a first welding material is used is performed to form a notched part and a bury a first region positioned on a blade-body side with a first welding material; and a second welding step in which, after the first welding step, overlay welding in which a second welding material is used is performed to form a notched part and bury a second region positioned on a front-surface side of a platform with the second welding material. The high-temperature strength of the second welding material is higher than the high-temperature strength of the first welding material, the weldability of the first welding material is higher than the weldability of the second welding material, and the second region is located in a range from 1.0 mm to 3.0 mm (inclusive) from the front surface of the platform toward the blade body.

A metal-cored electrode for welding to form a weld bead on a ferrous material, which weld bead includes at least 35 wt. % nickel. The metal-cored electrode includes a metal sheath surrounding a core. The core includes greater than 35 wt. % nickel.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.