A wafer processing method in which a wafer including devices on a front surface side is processed. The method includes a wafer-with-protective-component forming step of forming the wafer with a protective component through sticking the protective component formed of a resin that softens by heat to the front surface side by pressing and heating the protective component, a thickness measurement step of measuring a thickness of the protective component in the wafer with the protective component, and a grinding step of holding the wafer with the protective component by a chuck table and grinding a back surface side of the wafer until a thickness of the wafer becomes an intended finished thickness. In the grinding step, the thickness of the protective component measured in the thickness measurement step is subtracted from a total thickness of the wafer with the protective component to calculate the thickness of the wafer.

A wafer processing method includes applying a laser beam of such a wavelength as to be transmitted through a wafer to the wafer from a back surface of the wafer, with a focal point of the laser beam positioned at a predetermined point inside the wafer, to form division start points along streets, the division start point including a modified layer and a crack extending from the modified layer to a front surface of the wafer; and grinding the back surface of the wafer by a grinding wheel having a plurality of grindstones in an annular pattern, to thin the wafer and divide the wafer into individual device chips. In forming the division start points, a chuck table is heated to a predetermined temperature, whereby the cracks formed inside the wafer to extend from the modified layers to the front surface of the wafer are grown.

A surface irregularity reducing method includes a holding step of holding a first workpiece on a first holder and holding a second workpiece that is of the same material as the first workpiece on a second holder, and a surface irregularity reducing step of moving the first holder and the second holder relatively to each other while the first workpiece held on the first holder and the second workpiece held on the second holder are being kept in contact with each other, thereby removing surface irregularities of a contact surface of at least either the first workpiece or the second workpiece.

A grinding apparatus conveys a wafer from a first rough grinding unit and a first finish grinding unit to a first laser beam irradiation unit by a turntable. Thus, in one grinding apparatus, the wafer can be ground and damage of the wafer caused due to the grinding can be repaired easily and rapidly. Therefore, it is possible to execute the grinding of the wafer and the repair of the damage efficiently and favorably.

A grinding apparatus includes a chuck table that holds a workpiece through a protective tape, where the protective tape is attached to one surface of an annular frame so as to cover an opening of the annular frame and the workpiece is attached to the protective tape on an inner side of an inner circumferential edge of the opening of the annular frame; a grinding unit for grinding the workpiece; and a frame cleaning unit that cleans the other surface located on a side opposite to the one surface of the annular frame obtained after grinding of the workpiece, and wherein the frame cleaning unit has either: (i) a first cleaning member configured and arranged for making contact with the other surface of the annular frame and having flexibility, or (ii) a second cleaning member that jets at least either gas or liquid from above the other surface of the annular frame.

A workpiece has a device area and a peripheral area surrounding the device area on a front surface side thereof. A workpiece grinding method includes a groove forming step of performing grinding feed of a grinding unit while a spindle is rotated, and grinding a predetermined area on a back surface side of the workpiece, the predetermined area corresponding to the device area, in a state in which a chuck table holding the workpiece is not rotated, thereby forming a groove on the back surface side, a groove removing step of starting rotation of the chuck table while the spindle is kept rotating, thereby grinding side walls of the groove and removing the groove, and a recess forming step of performing grinding feed of the grinding unit while the spindle and the chuck table are rotated, thereby grinding the predetermined area and forming a recess and a ring-shaped reinforcement part.

A chuck table includes a holding plate having a holding surface for holding the wafer under suction, and a frame body that supports the holding plate thereon and transmits a negative pressure or a positive pressure to the holding surface. The holding plate is formed such that a plurality of cleaved portions are included through cleavage of the holding plate into a plurality of blocks along a plurality of modified layers formed by applying a laser beam of a wavelength, which has transmissivity through the holding plate, with a focal point thereof positioned inside the holding plate, and the negative pressure or the positive pressure is transmitted from the cleaved portions to the holding surface. A grinding machine and a manufacturing method of the chuck table for holding the wafer are also disclosed.

A second relative speed of a grinding wheel and a wafer along a second direction in a grinding step is set such that a relative movement of the grinding wheel and the wafer along a first direction and a relative movement of the grinding wheel and the wafer along the second direction are concurrently initiated and are concurrently finished. Specifically, this second relative speed is set taking into consideration parameters which are optionally set, and an expected wear thickness of multiple grinding stones as known before or in a course of the grinding step, in other words, the absolute value of an expected variation in thickness of the grinding stones through the grinding step.

A processing device that alleviates the influence of rough grinding and performs fine grinding and processes the work with a satisfactory precision. An index table includes a plurality of chucks for holding a work and transports the work to a rough grinding stage with a rough grinding means for rough grinding the work, a medium grinding stage with a medium grinding means for medium grinding the work, and a fine grinding stage with a fine grinding means for fine grinding the work. A first column extends over the index table and one of the rough grinding means or the fine grinding means is installed. A second column extends over the index table and is independent from the first column, and the medium grinding means is installed and the other one of the rough grinding means or the fine grinding means is arranged parallel to the medium grinding means.

To provide a silicon epitaxial wafer production method and a silicon epitaxial wafer in which the DIC defects can be suppressed, a silicon epitaxial wafer production method is provided, in which an epitaxial layer is grown in a vapor phase on a principal plane of a silicon single crystal wafer. The principal plane is a {110} plane or a plane having an off-angle of less than 1 degree from the {110} plane. The silicon epitaxial wafer production method includes setting a temperature of the silicon single crystal wafer to 1140° C. to 1165° C. and growing the epitaxial layer in the vapor phase at a growth rate of 0.5 μm/min to 1.7 μm/min.