Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed.

Provided is a polishing composition containing: anionically-modified colloidal silica; a dispersing medium; an anionic water-soluble polymer which is a copolymer including a structural unit having a sulfonic acid group or a salt group thereof and a structural unit having a carboxy group or a salt group thereof; a polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; a nitrogen-free non-ionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; and a nitrogen-containing non-ionic polymer.

Provided are a protective film and a back grinding method for a semiconductor wafer, which can suppress occurrence of suction defect. A protective film is a film that protects a surface of a semiconductor wafer on which a circuit is formed when a back surface of the semiconductor wafer is ground in a state where the surface of the semiconductor wafer is sucked to a fixture. The protective film has a pressure-sensitive adhesive layer, a base material layer, and an auxiliary layer. The pressure-sensitive adhesive layer is a layer to be stuck to the semiconductor wafer, the auxiliary layer is a layer to be contact to the fixture, and the semiconductor wafer is a semiconductor wafer having a level difference on an outer peripheral edge of the surface on which the circuit is formed.

A grinding apparatus and a grinding method of a composite substrate including resin, by which loading of a grinding wheel can be suppressed in grinding of a large-sized composite substrate including resin, and with which grinding can be effectively performed with high precision. This method for grinding a front surface of a composite substrate formed with a resin substrate embedded with at least one of a semiconductor device chip and an electrode, includes: bringing at least a part of a grinding member for grinding the front surface of the composite substrate into contact with the front surface; supplying water to at least one of a contacting part or a non-contacting part between the front surface of the composite substrate and the grinding member; and grinding the front surface of the composite substrate simultaneously with the supplying water.

A grinding apparatus includes a chuck table that holds a wafer on a holding surface; a grinding unit that has a spindle unit in which a spindle with an annular grindstone mounted to a tip thereof is rotatably supported and that grinds the wafer by use of the grindstone; a grinding feeding mechanism that puts the grinding unit into grinding feeding in a grinding feeding direction perpendicular to the holding surface; a first height gauge that measures the height of the holding surface; a second height gauge that measures the height of an upper surface of the wafer; and a calculation section that calculates the difference between the height of the holding surface and the height of the upper surface of the wafer, as the thickness of the wafer. In the grinding apparatus, the first height gauge and the second height gauge are disposed in the grinding unit.

A substrate processing system includes a first main surface grinding device configured to grind, while holding a substrate from below with a first main surface of the substrate facing upwards, the first main surface of the substrate; a first inverting device configured to invert the substrate ground by the first main surface grinding device; and a second main surface grinding device configured to grin, while holding the ground first main surface of the substrate from below with a second main surface of the substrate facing upwards, the second main surface of the substrate.

A method of grinding a workpiece includes a holding step of holding the workpiece on a flat holding surface of a holding table and a grinding step of rotating a grinding wheel to turn grindstones along an annular track while rotating the holding table, and bringing the grindstones into grinding contact with an upper surface of the workpiece to thereby grind the workpiece. The grinding step includes the step of bringing the grindstones into grinding contact with the upper surface of the workpiece in a state where the annular track is closest to the holding surface in an area between a point above a center of the holding surface and a point above an outer circumferential end of the holding surface.

A semiconductor substrate grinding apparatus including a chuck table configured to mount and fix a semiconductor substrate, so that a back side of the semiconductor substrate faces upwardly and rotates in one direction; a grinding wheel on the chuck table configured to grind the back side of the semiconductor substrate; a cleaning liquid supplier on the chuck table, spaced apart from the grinding wheel, and configured to supply a cleaning liquid to the back side of the semiconductor substrate for cleaning by-products generated by grinding the semiconductor substrate; a slurry supplier on the chuck table, adjacent to the cleaning liquid supplier, and configured to supply a slurry to the back side of the semiconductor substrate; and a polishing wheel on the chuck table, spaced apart from the slurry supplier, and configured to perform chemical mechanical polishing on the back side of the semiconductor substrate using the slurry.

A method of manufacturing a fluorescent substance includes forming dicing trenches on one surface of a fluorescent substance wafer along lattice-shaped dicing lines, and a lower surface grinding operation (S6) of grinding a surface opposite to a surface of the wafer in which the dicing trenches are formed as much as a predetermined thickness using a disk-shaped grinder so that the wafer is divided into a plurality of fluorescent substances, which are color conversion members for light emitting diodes (LEDs).

A distance measuring device comprises a measuring head, the measuring head having an optical measuring system for carrying out an optical measurement process on a measurement object by means of at least one measuring light beam formed from a broad-band measuring light. The measuring head further has a liquid guide with a liquid inlet and a liquid outlet for producing a jet of liquid directed at the measurement object, the liquid guide being designed such that in certain sections at least the measuring light beam runs essentially along the jet of liquid. The measuring head further has a flow element with a laminar flow channel, the flow element being designed such that the at least one measuring light beam is able to reach the measurement object by passing through the laminar flow channel.

The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.