A semiconductor wafer is adhered and fixed to a polishing head by means of a conductive adhesive, and the wafer is connected to a positive electrode of an external power supply through wires of the inner and outer rings of a conductive slip ring below the wafer. A polishing pad is adhered to the bottom of a counter electrode disc, the counter electrode disc is fixed at the bottom of a polishing disc and is processed with through holes at the position corresponding to the polishing disc, and the counter electrode disc is connected to a negative electrode of the external power supply through the wires of inner and outer rings of a conductive slip ring above the counter electrode disc. Ultraviolet light emitted by an ultraviolet light source can reach the surface of the wafer through the through holes, and a polishing solution can be sprayed through the through holes into a contact area between the wafer and the polishing pad.

A processing apparatus configured to process a substrate includes a substrate holder having a substrate holding surface configured to attract and hold the substrate thereon; and an edge cleaning device configured to clean an edge portion of the substrate holding surface. Further, a processing method of processing a rear surface of the substrate by using the processing apparatus includes processing the rear surface of the substrate while a front surface of the substrate is attracted to and held by a substrate holding surface of a substrate holder; and cleaning an edge portion of the substrate holding surface.

Implementations of systems for thinning a semiconductor substrate may include: a substrate chuck configured to receive a semiconductor substrate for thinning, a spindle, a grinding wheel coupled to the spindle, and a water medium configured to be in contact with the semiconductor substrate during thinning. An ultrasonic energy source may be directly coupled to the substrate chuck, the spindle, the grinding wheel, the water medium, or any combination thereof.

A synthetic grindstone (100) for chemo-mechanical grinding a wafer S, comprising: an abrasive (101) that contains cerium oxide having an average particle diameter of 10 μm or less as a main component and has a chemo-mechanical grinding action on the wafer S; a friction promoter (102) that contains a fiber material having a Mohs hardness lower than that of the wafer S and a high friction coefficient as a main component and promotes heat generation; and a binder (103) that contains a phenol resin as a main component and disperses and binds the abrasive (101) and the friction promotor (102).

Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR) .sup.13C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, and a third peak appearing at 138 ppm to 143 ppm, and the area ratio of the third peak to the second peak is about 5:1 to about 10:1. The polishing pad may exhibit physical properties corresponding to the above-described peak characteristics, thereby achieving a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.

The present disclosure relates to a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same. In the polishing pad, an unexpanded solid-phase blowing agent is included in a polishing composition when a polishing layer is manufactured, and the unexpanded solid-phase blowing agent is expanded during a curing process to form a plurality of uniform pores in the polishing layer, such that defects occurring on a surface of the semiconductor substrate may be prevented. In addition, the present disclosure may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.

The application relates to a manufacture method of a high-resistivity silicon handle wafer for a hybrid substrate structure. The method comprises a step of producing the wafer having a crystal orientation identifier and a certain thickness. The method further comprises a step of thinning the produced wafer from the certain thickness to a desired thickness of the wafer in order to obtain the thinned wafer. The method further comprises a step of providing a surface passivation layer having a certain layer thickness on a front surface of the thinned wafer. The method further comprises a step of polishing the passivation layer from the certain layer thickness to a desired final layer thickness of the passivation layer so that the polished front surface of the wafer enables active layer bonding in order to form the hybrid substrate structure.

A wafer processing method for processing a wafer having a chamfered portion formed at a periphery thereof includes a tape attaching step of attaching a protective tape to a front surface of the wafer and making a diameter of the protective tape coincide with a diameter of the wafer; a grinding step of grinding a back surface of the wafer held by a holding table with use of grinding stones so as to thin the wafer to a thickness thinner than half of an original thickness, to reduce the diameter of the wafer, and to form a protruding portion where the protective tape protrudes from the wafer; and a contracting step of heating and contracting the protruding portion of the protective tape after the grinding step is carried out.

A method and system for polishing a plurality of workpieces is disclosed. The method and system comprises providing a polishing tool with multiple polishing heads; and providing a substrate tray that can hold the plurality of work pieces in a fixed position on a tray underneath the polishing heads. The system and method includes moving the tray within the polisher. Finally, the method and system includes configuring the multiple polishing heads with the appropriate pad/slurry combinations to polish the workpieces and to create a finished polished surface on the plurality of work pieces.

A grinding wheel includes an annular base having a free end portion and a plurality of segment grindstones fixed on the free end portion of the annular base in a state of being spaced from one another in a circumferential direction. The plurality of segment grindstones are divided into a plurality of grindstone groups each including a predetermined number of segment grindstones. Each of the segment grindstones included in each of the grindstone groups has a grinding surface formed into a rectangular shape having a long side and a short side. The segment grindstones of the grindstone group are sequentially fixed on the free end portion of the annular base from an outer circumferential side toward an inner circumferential side such that directions in which the long sides of the segment grindstones extend are changed from the circumferential direction to a diametric direction of the free end portion.