A wafer grinding apparatus performs grinding processing for grinding a semiconductor wafer with a grindstone. The grindstone has a wear rate as a characteristic. The wear rate is 5% or more, and less than 200%. A determination part performs determination processing for determining whether a grinding state with respect to the semiconductor wafer is abnormal or normal, based on at least one of a load current of a motor and a grinding wear amount.

A wafer scale ultrasonic sensing device includes a substrate assembly, an ultrasonic component, a first protective layer, a first conductive circuit, a second conductive circuit, a second protective layer, a conductive material, electrical connection layers, and soldering portions. The substrate assembly includes a first wafer and a second wafer, and the second wafer covers a groove on the first wafer to define a hollow chamber. The first wafer, the second wafer, and the first protective layer are coplanar with the first conductive circuit on a first side surface and coplanar with the second conductive circuit on a second side surface. The second protective layer has an opening, where the conductive material is in the opening and is in contact with the ultrasonic component. The electrical connection layers are on the first side surface and the second side surface, and the soldering portions are respectively connected to the electrical connection layers.

A grinding apparatus includes a chuck table for holding a workpiece thereon, a table base supporting the chuck table, a grinding unit for grinding the workpiece held on the chuck table with a grinding wheel mounted on an end of a spindle, a load detecting unit for detecting a load applied from the grinding unit to the table base, a tilt adjustment unit supporting the table base thereon, for adjusting a tilt of the table base, a storage for storing a correlative relation between loads applied to the table base and changes in the tilt of the table base, and a controller for controlling the tilt adjustment unit based on the load detected by the load detecting unit and the correlative relation, to adjust the tilt of the table base so that a change in the tilt of the table base that corresponds to the detected load is cancelled out.

A method for machining a plate-shaped component, in particular an electrostatic holding device or an immersion wafer table, with a surface formed by end faces of protruding burls, including: mutual alignment of the component on a component carrier device and of a mechanical polishing tool on a tool carrier device, wherein the polishing tool and the component are arranged for relative movement to remove material from end face(s) of at least one burl. The polishing tool includes shape-stable, deformable binding agent and polishing particles therein. Pressure force between the polishing tool and the at least one burl is measured by a force sensor device. The tool carrier device and/or the component carrier device are set to a predefined working value of the pressure force such that material is removed from the end face during removal movement. Also disclosed are a plate-shaped component produced with the method, and a polishing device.

A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

Proposed herein is a method for producing a substrate suitable for mask blanks for EUVL and the method being capable of suppressing a concave defect having a depth of less than 5 nm.

The present invention provides a method for producing a substrate in which final polishing is performed by a polishing apparatus having an upper polishing plate equipped with a polishing pad, the method comprising the steps of placing a substrate stock in the polishing apparatus so that the main surface of the substrate stock face toward the upper polishing plate; rotating the upper polishing plate and polishing the substrate stock concomitantly with a polishing slurry on the main surface of the substrate stock; and raising the upper polishing plate which is kept being rotated to separate it from the main surface of the polished substrate stock.

Polishing pads having varying protrusions and methods of forming the same are disclosed. In an embodiment, a polishing pad includes a polishing pad substrate; a first protrusion on the polishing pad substrate, the first protrusion including a central region and a peripheral region surrounding the central region, and a first hardness of the central region being greater than a second hardness of the peripheral region; and a first groove adjacent a first side of the first protrusion.

Provided is a workpiece grinding method that is applied when a circular plate-shaped workpiece which has a first surface and a second surface on an opposite side of the first surface is to be ground. The workpiece grinding method includes a first grinding step of grinding the workpiece to form a circular plate-shaped first thin plate portion and an annular first thick plate portion that surrounds the first thin plate portion and that has an inner side surface at least part of which is inclined with respect to the second surface, and a second grinding step of grinding the workpiece to form a circular plate-shaped second thin plate portion that is larger in diameter but thinner than the first thin plate portion and an annular second thick plate portion that surrounds the second thin plate portion.

A method of processing a workpiece which includes metal in a work surface by a processing unit including a grindstone or a polishing pad includes a processing step of grinding or polishing the workpiece by the processing unit while supplying a processing fluid to the work surface of the workpiece. The processing fluid contains an organic acid and an oxidizing agent.

The present disclosure discloses a control method of a grinding water flow rate during a double side grinding process. A double side grinder used includes a grinding wheel, a feed unit and a water supply device, wherein a water inlet is disposed on the feed unit. The control method includes: S001: according to the operation procedure of a double side grinder, prepare for grinding and complete the installation and debugging of workpiece; S002: in the process of double side grinding, the flow rate of the water inlet is set to decrease with the shortening of the teeth length of the grinding wheel, and the flow rate of the water inlet is set to have a linear relationship with the teeth length of the grinding wheel.