A wafer holding apparatus for holding a wafer having undulation. The wafer holding apparatus includes a holding portion having a holding surface for holding the wafer, the holding portion being composed of a plurality of piezoelectric elements having suction holes selectively connected to a vacuum source, the piezoelectric elements having front end surfaces collected to form the holding surface. The wafer holding apparatus further includes a frame member supporting the holding portion and a control unit controlling a voltage to be applied to each of the piezoelectric elements according to the undulation of the wafer, whereby the wafer is held on the holding surface in the condition where the undulation of the wafer is followed by undulation produced on the holding surface due to a change in a length of each of the piezoelectric elements.

A processing apparatus includes: a chuck table that is configured to be capable of rotation in a state of supporting the workpiece; a processing unit including a spindle to which a processing tool for grinding or polishing is mounted and a drive source that rotates the spindle; a measuring unit that measures distribution of thickness of the workpiece; a laser beam applying unit that has an adjustor for adjusting power of a laser beam applied to the workpiece; and a control unit including a power setting section that sets the power of the laser beam applied to an arbitrary region of the workpiece based on the distribution of the thickness of the workpiece measured by the measuring unit, and an adjustor control section that controls the adjustor of the laser beam applying unit such as to realize the power of the laser beam set by the power setting section.

An semiconductor manufacturing apparatus and method to smooth surfaces of discrete pads on a substrate. The method includes placing a surface of one of the discrete pads in registration with a first chamber of a set of chambers of a smoothing tool, the set corresponding to a smoothing cycle of the smoothing tool; etching, within the first chamber, a surface of one of the discrete pads to form an etch layer on the surface; placing the surface in registration with a second chamber of the set; after the etch, pumping gas and vapor from the surface within the second chamber; placing the surface in registration with a third chamber of the set; and applying heating to the surface in the third chamber to smooth the surface.

A seed crystal for single crystal 4H-SiC growth of the present invention is a disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter, in which one surface on which the single crystal 4H-SiC is grown is a mirror surface and an Ra of the other surface is more than 10 nm, and an absolute value of magnitude of waviness in a state where the seed crystal is freely deformed so that an internal stress distribution is reduced is less than or equal to 12 m.

A substrate warpage correction method according to this disclosure corrects warpage of a substrate without performing a process on a front surface of the substrate. The substrate warpage correction method includes a surface roughening of performing a surface roughening process on a rear surface of the substrate using a surface roughening processing apparatus configured to be able to perform the surface roughening process on the rear surface of the substrate, to form grooves in the rear surface to thereby correct the warpage of the substrate.

A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

A workpiece grinding method including a first surface protection step of covering a front surface of a workpiece with a workpiece protective member, a second surface protection step of covering front surface of a support substrate with a support substrate protective member, a workpiece unit formation step of causing an adhesive to spread over a side surface of an outer peripheral portion of the workpiece to fix the side surface to the support substrate, and forming a workpiece unit, a grinding step of thinning the workpiece, a first peeling step of peeling off the workpiece after thinning, the workpiece protective member, the adhesive, and the support substrate protective member from the support substrate as one unit in such a manner to turn them over, and a second peeling step of peeling off the workpiece protective member, the adhesive, and the support substrate protective member as one unit from the workpiece.

A grinding apparatus includes: a holding table for holding a workpiece thereon; a grinding unit including a grinding wheel for grinding the workpiece held on the holding table, the grinding wheel including a grinding stone made of abrasive grains and grains of photocatalyst bonded by a vitrified bonding material; a grinding water supply unit configured to supply grinding water to the grinding stone when the workpiece held on the holding table is ground by the grinding unit; and a light applying unit disposed adjacent to the holding table and configured to apply light to a grinding surface of the grinding stone while the workpiece held on the holding table being ground.

A method and an apparatus which can efficiently polish an entirety of a back surface, including an outermost area thereof, of a substrate while the back surface of the substrate faces downward are disclosed. The method includes rotating a substrate by rotating a plurality of rollers about their respective own axes while the rollers contact a periphery of the substrate with a back surface of the substrate facing downward; and polishing an entirety of the back surface of the substrate by moving a polishing tool relative to the substrate while supplying a liquid onto the back surface of the substrate and while placing the polishing tool in contact with the back surface of the substrate, the polishing tool being located at a lower side of the substrate.

A wafer processing method includes sticking an adhesive tape to the front surface of a wafer, disposing a thermocompression bonding sheet on the adhesive tape stuck to the front surface of the wafer. The thermocompression bonding sheet is heated and pressed by a flat member to execute pressure bonding of the thermocompression bonding sheet to the adhesive tape and integrate the thermocompression bonding sheet with the wafer. The processing method also includes holding the side of the thermocompression bonding sheet on a chuck table of a grinding apparatus and grinding the wafer into a desired thickness while supplying grinding water to the back surface of the wafer. The integrated wafer is separated from the chuck table and the thermocompression bonding sheet is separated from the adhesive tape.