Provided is a substrate grinding device including: a work table; a first grinding wheel; and a second grinding wheel, wherein the work table is configured to rotate while sucking and holding a substrate, the first grinding wheel and the second grinding wheel are cup wheel type wheels, and provided at positions where the first grinding wheel and the second grinding wheel can be simultaneously in contact with the substrate rotating, the first grinding wheel and the second grinding wheel being configured to grind the substrate rotating, while rotating, and the work table is configured to be able to move a rotation center of the substrate from a first grinding position within a grinding range of the first grinding wheel to a second grinding position within a grinding range of the second grinding wheel.

Stored is a height of a grinding mechanism when lower surfaces of grinding stones have come into contact with an upper surface of a wafer held on a holding surface, through lowering of the grinding mechanism from above the wafer. Based on this height, an origin point height which is a height of the grinding mechanism when the lower surfaces of the grinding stones have come into contact with the holding surface is then determined.

A cleaning process of wafer polishing pad, the process includes providing a wafer polishing pad, performing a planarization process with the wafer polishing pad, leaving a residue on the wafer polishing pad after the planarization process, and performing a cleaning step with a cleaning nozzle to remove the residue, the cleaning nozzle comprises at least one Y-shaped pipe, one end of which is a water outlet, and the other two ends are respectively a water inlet and an air inlet, wherein a cleaning liquid flows from the water inlet to the water outlet, and a pressurized gas flows in from the air inlet.

A processing apparatus includes a chuck configured to hold a substrate; a moving unit to which a processing tool configured to process the substrate is mounted; a sprinkler configured to spray a cleaning liquid configured to clean the moving unit from an outside of the moving unit; and a housing accommodating the chuck, the processing tool, and the sprinkler therein. The sprinkler includes a fixed unit fixed to an inside of the housing, and a rotating unit rotatably supported at the fixed unit. The rotating unit includes a nozzle configured to discharge the cleaning liquid, and a rotation block configured to hold the nozzle.

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.

There is provided a processing method of grinding a workpiece. The processing method includes a holding step of holding the workpiece on a side of its front surface on a chuck table, a coarse grinding step of grinding the workpiece on a side of its back surface with first grinding stones until the workpiece has a predetermined thickness, an auxiliary grinding step of grinding the workpiece on the side of its back surface with the first grinding stones such that an unground region remains at an outer peripheral portion of the workpiece, an unground region grinding step of grinding the unground region with second grinding stones having an average abrasive grain size smaller than that of the first grinding stones, and a finish grinding step of grinding the workpiece on the side of its back surface with the second grinding stones until the workpiece has a predetermined finish thickness.

Exemplary methods of manufacturing a semiconductor cover wafer may include sintering aluminum nitride particles into a substrate characterized by a thickness and characterized by a disc shape. The methods may include grinding a surface of the substrate to reduce the thickness to less than or about 2 mm. The methods may include polishing the surface of the substrate to reduce a roughness. The methods may include annealing the substrate at a temperature of greater than or about 800° C. for a time period of greater than or about 60 minutes.

A grinding wheel is mounted on a tip end of a spindle and the grinding wheel grinds a workpiece according to rotation of the spindle. The grinding wheel includes an annular base, and a plurality of grindstone sets disposed in an annular manner on one surface side of the base along a circumferential direction of the base. Each of the plurality of grindstone sets has a first grindstone and a second grindstone having a self-sharpening capability lower than that of the first grindstone, such that the first grindstone and the second grindstone are adjacent to each other in a predetermined orientation in the circumferential direction of the base, and a predetermined interval larger than an interval between the first grindstone and the second grindstone in the circumferential direction of the base is provided between adjacent ones of the grindstone sets.

A creep feed grinding apparatus includes a chuck table, a grinding unit having a spindle and a grinding wheel mounted on a lower end of the spindle, the grinding wheel including a plurality of grindstones disposed in an annular array on a surface of an annular base, the grindstones following an annular track upon rotation of the spindle, a moving mechanism for moving the chuck table and the grinding unit relative to each other along a predetermined direction perpendicular to the longitudinal axis of the spindle, and a bottom surface state adjusting mechanism for adjusting states of bottom surfaces of the grindstones by cleaning and/or correcting the bottom surfaces of the grindstones. The bottom surface state adjusting mechanism is positioned outside of a relative movement area of the chick table in which the chuck table and the grinding unit are moved relative to each other by the moving mechanism.

A grinding apparatus has a grinding wheel fastened to a mount disk connected a spindle by a plurality of bolts. The mount disk has at least three threaded holes and a plurality of protrusions protruding from a mount surface thereof. Each of the bolts includes an externally threaded shank, a neck coupled to the externally threaded shank, and an engaging flange coupled to the neck and extending radially outwardly. The grinding wheel includes an annular open hole defined in a mating surface of an annular base for mating with the mount surface, an annular slot that is wider than the annular open hole and is fluidly connected to the annular open hole, at least three insertion holes in the annular open hole for allowing the engaging flange to be inserted into the annular slot, and a plurality of protrusion insertion holes for receiving the engaging flanges of the bolts.